ESR Studies on Hot Wire Amorphous Silicon

ESR Studies on Hot Wire Amorphous Silicon

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Abstract

We measure a series of hot-wire (HW) amorphous silicon films grown with hydrogen contents CH varying between 0.5 - 17 at. percent. From constant photocurrent method (CPM) measurements and the steady-state photocarrier grating method (SSPG) we find good agreement with previous measurements on similar hot-wire films. Electron spin resonance measurements on the same samples, however, yieldsignificantly higher spin densities than expected. A thickness series indicates a highly defective layer close to the substrate interface. We propose that this defective layer may be due to excessive out diffusion of hydrogen during growth at high temperatures, as seen by secondary ion mass spectroscopy. ESR measurements on light-degraded samples indicate an improved stability of samples with CH< 9 at. percent.

Original language	American English
Pages	663-668
Number of pages	6
State	Published - 1997
Event	Amorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium - San Francisco, California Duration: 31 Mar 1997 → 4 Apr 1997

Conference

Conference	Amorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium
City	San Francisco, California
Period	31/03/97 → 4/04/97

NREL Publication Number

NREL/CP-520-24557

Cite this

@conference{c1226da793a1416ca892a97a338793c9,

title = "ESR Studies on Hot Wire Amorphous Silicon",

abstract = "We measure a series of hot-wire (HW) amorphous silicon films grown with hydrogen contents CH varying between 0.5 - 17 at. percent. From constant photocurrent method (CPM) measurements and the steady-state photocarrier grating method (SSPG) we find good agreement with previous measurements on similar hot-wire films. Electron spin resonance measurements on the same samples, however, yieldsignificantly higher spin densities than expected. A thickness series indicates a highly defective layer close to the substrate interface. We propose that this defective layer may be due to excessive out diffusion of hydrogen during growth at high temperatures, as seen by secondary ion mass spectroscopy. ESR measurements on light-degraded samples indicate an improved stability of samples with CH< 9 at. percent.",

author = "NREL",

year = "1997",

language = "American English",

pages = "663--668",

note = "Amorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium ; Conference date: 31-03-1997 Through 04-04-1997",

}

TY - CONF

T1 - ESR Studies on Hot Wire Amorphous Silicon

AU - NREL, null

PY - 1997

Y1 - 1997

N2 - We measure a series of hot-wire (HW) amorphous silicon films grown with hydrogen contents CH varying between 0.5 - 17 at. percent. From constant photocurrent method (CPM) measurements and the steady-state photocarrier grating method (SSPG) we find good agreement with previous measurements on similar hot-wire films. Electron spin resonance measurements on the same samples, however, yieldsignificantly higher spin densities than expected. A thickness series indicates a highly defective layer close to the substrate interface. We propose that this defective layer may be due to excessive out diffusion of hydrogen during growth at high temperatures, as seen by secondary ion mass spectroscopy. ESR measurements on light-degraded samples indicate an improved stability of samples with CH< 9 at. percent.

AB - We measure a series of hot-wire (HW) amorphous silicon films grown with hydrogen contents CH varying between 0.5 - 17 at. percent. From constant photocurrent method (CPM) measurements and the steady-state photocarrier grating method (SSPG) we find good agreement with previous measurements on similar hot-wire films. Electron spin resonance measurements on the same samples, however, yieldsignificantly higher spin densities than expected. A thickness series indicates a highly defective layer close to the substrate interface. We propose that this defective layer may be due to excessive out diffusion of hydrogen during growth at high temperatures, as seen by secondary ion mass spectroscopy. ESR measurements on light-degraded samples indicate an improved stability of samples with CH< 9 at. percent.

M3 - Paper

SP - 663

EP - 668

T2 - Amorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium

Y2 - 31 March 1997 through 4 April 1997

ER -

ESR Studies on Hot Wire Amorphous Silicon

Abstract

Conference

NREL Publication Number

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