Evaluating Recombination Mechanisms in RbF Treated Cu(InxGa1-x)Se2 Solar Cells

Jake Wands, Ana Kanevce, Alexandra Bothwell, Michael Miller, Stefan Paetel, Aaron Arehart, Angus Rockett

Research output: Contribution to journalArticlepeer-review

2 Scopus Citations

Abstract

2 (CIGS) photovoltaic devices. In this study, temperature-dependent current voltage (JVT) and time-resolved photoluminescence (TRPL) experiments were combined with modeling using the solar cell capacitance simulator (SCAPS) computer code to investigate the effect of the RbF PDT. Two devices, one as-deposited and one with RbF PDT, were deposited by a three stage coevaporation process. JVT measurements suggest the dominant recombination mechanism may be tunneling-enhanced recombination via bandtail states, but that defect states in the bandgap can also be important. RbF PDT is shown to decrease the characteristic energy of the bandtails. TRPL data show an increase in the minority carrier lifetime after RbF PDT, leading to an improved open-circuit voltage. SCAPS modeling indicates that the dominant recombination mechanism is dependent on the specific defect makeup of a device, suggesting that small changes in processing conditions can impact device behavior. This explains the observation that, for some devices, defect states in the gap dominate while others, as is the case here, appear to be dominated by bandtails.
Original languageAmerican English
Pages (from-to)1400-1405
Number of pages6
JournalIEEE Journal of Photovoltaics
Volume12
Issue number6
DOIs
StatePublished - 2022

NREL Publication Number

  • NREL/JA-5900-83601

Keywords

  • characterization
  • CIGS
  • recombination
  • thin film PV

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