Evaluation of ITO/GaAs Solar Cells

P. Sheldon, R. E. Hayes, P. E. Russell, R. N. Nottenburg, K. A. Emery, P. J. Ireland, L. L. Kazmerski

Research output: Contribution to journalArticlepeer-review

7 Scopus Citations


A critical technical evaluation of the ITO/GaAs solar cell is presented, emphasizing the factors limiting the performance of the device. The devices are fabricated on p-type (Be-doped) GaAs grown by MBE, with the ITO deposited by ion beam techniques. Light and dark J-V characteristics are presented and compared for these devices. The formation of buried homojunctions is postulated for cells damaged due to ion beam deposition, leading to higher V//o//c and low J//s//c. Heterojunction formation is observed for minimally disrupted GaAs surfaces. AES depth profiles are used to evaluate the chemicalwidth of the ITO/GaAs interfaces. Electrical data characterizing the ITO/GaAs interface are obtained using EBIC, C-V and intensity dependent V//o//c-J//s//c characteristics.

Original languageAmerican English
Pages (from-to)410-413
Number of pages4
JournalJournal of vacuum science & technology
Issue number3
StatePublished - 1981
Externally publishedYes
EventProc of the Natl Symp of the Am Vac Soc, Pt 1 - Anaheim, Calif, USA
Duration: 2 Nov 19816 Nov 1981

NREL Publication Number

  • ACNR/JA-213-3735


Dive into the research topics of 'Evaluation of ITO/GaAs Solar Cells'. Together they form a unique fingerprint.

Cite this