Evaluation of ITO/GaAs Solar Cells

P. Sheldon; R. E. Hayes; P. E. Russell; R. N. Nottenburg; K. A. Emery; P. J. Ireland; L. L. Kazmerski

doi:10.1116/1.571479

Evaluation of ITO/GaAs Solar Cells

P. Sheldon, R. E. Hayes, P. E. Russell, R. N. Nottenburg, K. A. Emery, P. J. Ireland, L. L. Kazmerski

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Abstract

A critical technical evaluation of the ITO/GaAs solar cell is presented, emphasizing the factors limiting the performance of the device. The devices are fabricated on p-type (Be-doped) GaAs grown by MBE, with the ITO deposited by ion beam techniques. Light and dark J-V characteristics are presented and compared for these devices. The formation of buried homojunctions is postulated for cells damaged due to ion beam deposition, leading to higher V//o//c and low J//s//c. Heterojunction formation is observed for minimally disrupted GaAs surfaces. AES depth profiles are used to evaluate the chemicalwidth of the ITO/GaAs interfaces. Electrical data characterizing the ITO/GaAs interface are obtained using EBIC, C-V and intensity dependent V//o//c-J//s//c characteristics.

Original language	American English
Pages (from-to)	410-413
Number of pages	4
Journal	Journal of vacuum science & technology
Volume	20
Issue number	3
DOIs	https://doi.org/10.1116/1.571479 https://doi.org/10.1116/1.571479
State	Published - 1981
Externally published	Yes
Event	Proc of the Natl Symp of the Am Vac Soc, Pt 1 - Anaheim, Calif, USA Duration: 2 Nov 1981 → 6 Nov 1981

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ACNR/JA-213-3735

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title = "Evaluation of ITO/GaAs Solar Cells",

abstract = "A critical technical evaluation of the ITO/GaAs solar cell is presented, emphasizing the factors limiting the performance of the device. The devices are fabricated on p-type (Be-doped) GaAs grown by MBE, with the ITO deposited by ion beam techniques. Light and dark J-V characteristics are presented and compared for these devices. The formation of buried homojunctions is postulated for cells damaged due to ion beam deposition, leading to higher V//o//c and low J//s//c. Heterojunction formation is observed for minimally disrupted GaAs surfaces. AES depth profiles are used to evaluate the chemicalwidth of the ITO/GaAs interfaces. Electrical data characterizing the ITO/GaAs interface are obtained using EBIC, C-V and intensity dependent V//o//c-J//s//c characteristics.",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Evaluation of ITO/GaAs Solar Cells

AU - Sheldon, P.

AU - Hayes, R. E.

AU - Russell, P. E.

AU - Nottenburg, R. N.

AU - Emery, K. A.

AU - Ireland, P. J.

AU - Kazmerski, L. L.

PY - 1981

Y1 - 1981

N2 - A critical technical evaluation of the ITO/GaAs solar cell is presented, emphasizing the factors limiting the performance of the device. The devices are fabricated on p-type (Be-doped) GaAs grown by MBE, with the ITO deposited by ion beam techniques. Light and dark J-V characteristics are presented and compared for these devices. The formation of buried homojunctions is postulated for cells damaged due to ion beam deposition, leading to higher V//o//c and low J//s//c. Heterojunction formation is observed for minimally disrupted GaAs surfaces. AES depth profiles are used to evaluate the chemicalwidth of the ITO/GaAs interfaces. Electrical data characterizing the ITO/GaAs interface are obtained using EBIC, C-V and intensity dependent V//o//c-J//s//c characteristics.

AB - A critical technical evaluation of the ITO/GaAs solar cell is presented, emphasizing the factors limiting the performance of the device. The devices are fabricated on p-type (Be-doped) GaAs grown by MBE, with the ITO deposited by ion beam techniques. Light and dark J-V characteristics are presented and compared for these devices. The formation of buried homojunctions is postulated for cells damaged due to ion beam deposition, leading to higher V//o//c and low J//s//c. Heterojunction formation is observed for minimally disrupted GaAs surfaces. AES depth profiles are used to evaluate the chemicalwidth of the ITO/GaAs interfaces. Electrical data characterizing the ITO/GaAs interface are obtained using EBIC, C-V and intensity dependent V//o//c-J//s//c characteristics.

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T2 - Proc of the Natl Symp of the Am Vac Soc, Pt 1

Y2 - 2 November 1981 through 6 November 1981

ER -

Evaluation of ITO/GaAs Solar Cells

Abstract

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