Evaluation of NF3 versus Dimethylhydrazine as N Sources for GaAsN

Sarah Kurtz; R. Reedy; B. Keyes; Greg D. Barber; J. F. Geisz; D. J. Friedman; W. E. McMahon; J. M. Olson

doi:10.1016/S0022-0248(01)01712-2

Evaluation of NF3 versus Dimethylhydrazine as N Sources for GaAsN

Sarah Kurtz, R. Reedy, B. Keyes, Greg D. Barber, J. F. Geisz, D. J. Friedman, W. E. McMahon, J. M. Olson

National Renewable Energy Laboratory

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Abstract

Two nitrogen precursors (NF₃ and u-dimethylhydrazine) and two gallium precursors (trimethylgallium and triethylgallium) are explored for the growth of GaAs_1-xN_x by metal-organic, chemical-vapor deposition. The carbon and hydrogen impurity levels are relatively unaffected by changing nitrogen precursors, but the use of triethylgallium decreases the carbon contamination. These lower carbon levels are not correlated with a significant change in the background hole concentration except for x<0.2%. The photoluminescence and Hall data for as-grown GaAsN are also unaffected by the choice of nitrogen precursor. Published by Elsevier Science B.V.

Original language	American English
Pages (from-to)	323-326
Number of pages	4
Journal	Journal of Crystal Growth
Volume	234
Issue number	2-3
DOIs	https://doi.org/10.1016/S0022-0248(01)01712-2 https://doi.org/10.1016/S0022-0248(01)01712-2
State	Published - 2002

NREL Publication Number

NREL/JA-520-30523

Keywords

A3. Metalorganic chemical vapor deposition
A3. Organometallic vapor phase epitaxy
B1. Arsenides
B1. Gallium compounds
B1. Nitrides
B2. Semiconducting III-V materials

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title = "Evaluation of NF3 versus Dimethylhydrazine as N Sources for GaAsN",

abstract = "Two nitrogen precursors (NF3 and u-dimethylhydrazine) and two gallium precursors (trimethylgallium and triethylgallium) are explored for the growth of GaAs1-xNx by metal-organic, chemical-vapor deposition. The carbon and hydrogen impurity levels are relatively unaffected by changing nitrogen precursors, but the use of triethylgallium decreases the carbon contamination. These lower carbon levels are not correlated with a significant change in the background hole concentration except for x<0.2%. The photoluminescence and Hall data for as-grown GaAsN are also unaffected by the choice of nitrogen precursor. Published by Elsevier Science B.V.",

keywords = "A3. Metalorganic chemical vapor deposition, A3. Organometallic vapor phase epitaxy, B1. Arsenides, B1. Gallium compounds, B1. Nitrides, B2. Semiconducting III-V materials",

author = "Sarah Kurtz and R. Reedy and B. Keyes and Barber, {Greg D.} and Geisz, {J. F.} and Friedman, {D. J.} and McMahon, {W. E.} and Olson, {J. M.}",

year = "2002",

doi = "10.1016/S0022-0248(01)01712-2",

language = "American English",

volume = "234",

pages = "323--326",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

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T1 - Evaluation of NF3 versus Dimethylhydrazine as N Sources for GaAsN

AU - Kurtz, Sarah

AU - Reedy, R.

AU - Keyes, B.

AU - Barber, Greg D.

AU - Geisz, J. F.

AU - Friedman, D. J.

AU - McMahon, W. E.

AU - Olson, J. M.

PY - 2002

Y1 - 2002

N2 - Two nitrogen precursors (NF3 and u-dimethylhydrazine) and two gallium precursors (trimethylgallium and triethylgallium) are explored for the growth of GaAs1-xNx by metal-organic, chemical-vapor deposition. The carbon and hydrogen impurity levels are relatively unaffected by changing nitrogen precursors, but the use of triethylgallium decreases the carbon contamination. These lower carbon levels are not correlated with a significant change in the background hole concentration except for x<0.2%. The photoluminescence and Hall data for as-grown GaAsN are also unaffected by the choice of nitrogen precursor. Published by Elsevier Science B.V.

AB - Two nitrogen precursors (NF3 and u-dimethylhydrazine) and two gallium precursors (trimethylgallium and triethylgallium) are explored for the growth of GaAs1-xNx by metal-organic, chemical-vapor deposition. The carbon and hydrogen impurity levels are relatively unaffected by changing nitrogen precursors, but the use of triethylgallium decreases the carbon contamination. These lower carbon levels are not correlated with a significant change in the background hole concentration except for x<0.2%. The photoluminescence and Hall data for as-grown GaAsN are also unaffected by the choice of nitrogen precursor. Published by Elsevier Science B.V.

KW - A3. Metalorganic chemical vapor deposition

KW - A3. Organometallic vapor phase epitaxy

KW - B1. Arsenides

KW - B1. Gallium compounds

KW - B1. Nitrides

KW - B2. Semiconducting III-V materials

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VL - 234

SP - 323

EP - 326

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 2-3

ER -

Evaluation of NF3 versus Dimethylhydrazine as N Sources for GaAsN

Abstract

NREL Publication Number

Keywords

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