Evaluation of NF3 versus Dimethylhydrazine as N Sources for GaAsN

Sarah Kurtz, R. Reedy, B. Keyes, Greg D. Barber, J. F. Geisz, D. J. Friedman, W. E. McMahon, J. M. Olson

Research output: Contribution to journalArticlepeer-review

31 Scopus Citations


Two nitrogen precursors (NF3 and u-dimethylhydrazine) and two gallium precursors (trimethylgallium and triethylgallium) are explored for the growth of GaAs1-xNx by metal-organic, chemical-vapor deposition. The carbon and hydrogen impurity levels are relatively unaffected by changing nitrogen precursors, but the use of triethylgallium decreases the carbon contamination. These lower carbon levels are not correlated with a significant change in the background hole concentration except for x<0.2%. The photoluminescence and Hall data for as-grown GaAsN are also unaffected by the choice of nitrogen precursor. Published by Elsevier Science B.V.

Original languageAmerican English
Pages (from-to)323-326
Number of pages4
JournalJournal of Crystal Growth
Issue number2-3
StatePublished - 2002

NREL Publication Number

  • NREL/JA-520-30523


  • A3. Metalorganic chemical vapor deposition
  • A3. Organometallic vapor phase epitaxy
  • B1. Arsenides
  • B1. Gallium compounds
  • B1. Nitrides
  • B2. Semiconducting III-V materials


Dive into the research topics of 'Evaluation of NF3 versus Dimethylhydrazine as N Sources for GaAsN'. Together they form a unique fingerprint.

Cite this