Evidence for Grain Boundary Passivation by Oxidation in Polycrystalline GaAs Solar Cells

L. L. Kazmerski, P. J. Ireland

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The chemistry and composition of grain boundaries in polycrystalline GaAs grown by liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE) are investigated using complementary Auger electron spectroscopy (AES), secondary ion mass spectroscopy (SIMS) and X-ray photoelectron spectroscopy (XPS). The effects of an unintentional residual-oxygen partial pressure during LPE growth are studied in terms of grain boundary passivation. Depth-compositional data confirm the grain boundary localization of oxides using an in situ, UHV fracturing technique. Indications of distributions of these oxides over the grain boundary are presented. The performances of Au Schottky barrier solar cells fabricated from the polycrystalline LPE and MBE GaAs are compared and differences are explained in terms of grain boundary activity.

Original languageAmerican English
Pages (from-to)525-528
Number of pages4
JournalJournal of vacuum science & technology
Issue number1
StatePublished - 1979
Externally publishedYes
EventProc of the Natl Symp of the Am Vac Soc, 26th - New York, NY, USA
Duration: 1 Oct 19795 Oct 1979

NREL Publication Number

  • ACNR/JA-213-3821


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