Evidence for Grain Boundary Passivation by Oxidation in Polycrystalline GaAs Solar Cells

L. L. Kazmerski; P. J. Ireland

doi:10.1116/1.570500

Evidence for Grain Boundary Passivation by Oxidation in Polycrystalline GaAs Solar Cells

L. L. Kazmerski, P. J. Ireland

Unknown

Research output: Contribution to journal › Article › peer-review

12 Scopus Citations

Abstract

The chemistry and composition of grain boundaries in polycrystalline GaAs grown by liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE) are investigated using complementary Auger electron spectroscopy (AES), secondary ion mass spectroscopy (SIMS) and X-ray photoelectron spectroscopy (XPS). The effects of an unintentional residual-oxygen partial pressure during LPE growth are studied in terms of grain boundary passivation. Depth-compositional data confirm the grain boundary localization of oxides using an in situ, UHV fracturing technique. Indications of distributions of these oxides over the grain boundary are presented. The performances of Au Schottky barrier solar cells fabricated from the polycrystalline LPE and MBE GaAs are compared and differences are explained in terms of grain boundary activity.

Original language	American English
Pages (from-to)	525-528
Number of pages	4
Journal	Journal of vacuum science & technology
Volume	17
Issue number	1
DOIs	https://doi.org/10.1116/1.570500 https://doi.org/10.1116/1.570500
State	Published - 1979
Externally published	Yes
Event	Proc of the Natl Symp of the Am Vac Soc, 26th - New York, NY, USA Duration: 1 Oct 1979 → 5 Oct 1979

NREL Publication Number

ACNR/JA-213-3821

Access to Document

Cite this

@article{2159c24339f64870b42427f507b8134e,

title = "Evidence for Grain Boundary Passivation by Oxidation in Polycrystalline GaAs Solar Cells",

abstract = "The chemistry and composition of grain boundaries in polycrystalline GaAs grown by liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE) are investigated using complementary Auger electron spectroscopy (AES), secondary ion mass spectroscopy (SIMS) and X-ray photoelectron spectroscopy (XPS). The effects of an unintentional residual-oxygen partial pressure during LPE growth are studied in terms of grain boundary passivation. Depth-compositional data confirm the grain boundary localization of oxides using an in situ, UHV fracturing technique. Indications of distributions of these oxides over the grain boundary are presented. The performances of Au Schottky barrier solar cells fabricated from the polycrystalline LPE and MBE GaAs are compared and differences are explained in terms of grain boundary activity.",

author = "Kazmerski, {L. L.} and Ireland, {P. J.}",

year = "1979",

doi = "10.1116/1.570500",

language = "American English",

volume = "17",

pages = "525--528",

journal = "Journal of vacuum science & technology",

issn = "0022-5355",

publisher = "American Institute of Physics",

number = "1",

note = "Proc of the Natl Symp of the Am Vac Soc, 26th ; Conference date: 01-10-1979 Through 05-10-1979",

}

TY - JOUR

T1 - Evidence for Grain Boundary Passivation by Oxidation in Polycrystalline GaAs Solar Cells

AU - Kazmerski, L. L.

AU - Ireland, P. J.

PY - 1979

Y1 - 1979

N2 - The chemistry and composition of grain boundaries in polycrystalline GaAs grown by liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE) are investigated using complementary Auger electron spectroscopy (AES), secondary ion mass spectroscopy (SIMS) and X-ray photoelectron spectroscopy (XPS). The effects of an unintentional residual-oxygen partial pressure during LPE growth are studied in terms of grain boundary passivation. Depth-compositional data confirm the grain boundary localization of oxides using an in situ, UHV fracturing technique. Indications of distributions of these oxides over the grain boundary are presented. The performances of Au Schottky barrier solar cells fabricated from the polycrystalline LPE and MBE GaAs are compared and differences are explained in terms of grain boundary activity.

AB - The chemistry and composition of grain boundaries in polycrystalline GaAs grown by liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE) are investigated using complementary Auger electron spectroscopy (AES), secondary ion mass spectroscopy (SIMS) and X-ray photoelectron spectroscopy (XPS). The effects of an unintentional residual-oxygen partial pressure during LPE growth are studied in terms of grain boundary passivation. Depth-compositional data confirm the grain boundary localization of oxides using an in situ, UHV fracturing technique. Indications of distributions of these oxides over the grain boundary are presented. The performances of Au Schottky barrier solar cells fabricated from the polycrystalline LPE and MBE GaAs are compared and differences are explained in terms of grain boundary activity.

UR - http://www.scopus.com/inward/record.url?scp=0018335461&partnerID=8YFLogxK

U2 - 10.1116/1.570500

DO - 10.1116/1.570500

M3 - Article

AN - SCOPUS:0018335461

SN - 0022-5355

VL - 17

SP - 525

EP - 528

JO - Journal of vacuum science & technology

JF - Journal of vacuum science & technology

IS - 1

T2 - Proc of the Natl Symp of the Am Vac Soc, 26th

Y2 - 1 October 1979 through 5 October 1979

ER -

Evidence for Grain Boundary Passivation by Oxidation in Polycrystalline GaAs Solar Cells

Abstract

NREL Publication Number

Access to Document

Other files and links

Fingerprint

Cite this