Evidence for Internal Electric Fields in Two Variant Ordered GaInP Obtained by Scanning Capacitance Microscopy

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    Abstract

    Single and two variant ordered GaInP samples are studied in cross section with the scanning capacitance microscope. Our study shows significant differences in the electronic properties of single and two variant GaInP. In unintentionally doped, ordered two variant samples, both n and p-type like domains are observed with the scanning capacitance microscope. In contrast, a spatially uniformcapacitance signal is observed in unintentionally doped single variant ordered GaInP. These microscopic capacitance observations can be qualitatively explained by bend bending or internal electric fields.
    Original languageAmerican English
    Pages (from-to)4081-4083
    Number of pages3
    JournalApplied Physics Letters
    Volume69
    Issue number26
    DOIs
    StatePublished - 1996

    NREL Publication Number

    • NREL/JA-520-23055

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