Abstract
Single and two variant ordered GaInP samples are studied in cross section with the scanning capacitance microscope. Our study shows significant differences in the electronic properties of single and two variant GaInP. In unintentionally doped, ordered two variant samples, both n and p-type like domains are observed with the scanning capacitance microscope. In contrast, a spatially uniformcapacitance signal is observed in unintentionally doped single variant ordered GaInP. These microscopic capacitance observations can be qualitatively explained by bend bending or internal electric fields.
Original language | American English |
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Pages (from-to) | 4081-4083 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 69 |
Issue number | 26 |
DOIs | |
State | Published - 1996 |
NREL Publication Number
- NREL/JA-520-23055