Evidence for the Neutralization of Boron in Silicon Using Surface Analysis Techniques

L. L. Kazmerski, A. J. Nelson, R. G. Dhere

Research output: Contribution to journalArticlepeer-review

9 Scopus Citations


Interactions between the shallow acceptor boron and hydrogen in single crystal, polycrystalline, and amorphous Si are investigated. Low-temperature secondary ion mass spectrometry depth-compositional profiles indicate a definite interaction between the boron concentration and the hydrogen penetration in single crystals and at grain boundaries. The bonding of the H is identified to be directly to the Si rather than to the B, and is confirmed by infrared measurements. Electrical neutralization of the B by hydroxyl-group bonding is also reported at oxygen-rich Si grain boundaries. No similar relationships between P concentration and H penetration are observed. In amorphous Si material, the B-doping level has only a limited effect on the hydrogen penetration which seems to be controlled instead by structural diffusion mechanisms.

Original languageAmerican English
Pages (from-to)1994-1997
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number4
StatePublished - 1987

NREL Publication Number

  • ACNR/JA-213-9523


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