Evidence for the Segregation of Impurities to Grain Boundaries in Multigrained Silicon Using AES and SIMS

T. Ciszek; P. Ireland; L. Kazmerski

doi:10.2172/1832199

Evidence for the Segregation of Impurities to Grain Boundaries in Multigrained Silicon Using AES and SIMS

T. Ciszek, P. Ireland, L. Kazmerski

National Renewable Energy Laboratory

Research output: NREL › Technical Report

Abstract

The first direct physical evidence is presented for the segregation of impurities to grain boundary regions in cast and directionally solidified multigrained silicon.

Original language	American English
Number of pages	26
DOIs	https://doi.org/10.2172/1832199
State	Published - 1979

NREL Publication Number

NREL/TP-32-252

Access to Document

10.2172/1832199

https://www.nrel.gov/docs/legosti/old/252.pdf

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title = "Evidence for the Segregation of Impurities to Grain Boundaries in Multigrained Silicon Using AES and SIMS",

abstract = "The first direct physical evidence is presented for the segregation of impurities to grain boundary regions in cast and directionally solidified multigrained silicon.",

author = "T. Ciszek and P. Ireland and L. Kazmerski",

year = "1979",

doi = "10.2172/1832199",

language = "American English",

type = "Other",

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T1 - Evidence for the Segregation of Impurities to Grain Boundaries in Multigrained Silicon Using AES and SIMS

AU - Ciszek, T.

AU - Ireland, P.

AU - Kazmerski, L.

PY - 1979

Y1 - 1979

N2 - The first direct physical evidence is presented for the segregation of impurities to grain boundary regions in cast and directionally solidified multigrained silicon.

AB - The first direct physical evidence is presented for the segregation of impurities to grain boundary regions in cast and directionally solidified multigrained silicon.

U2 - 10.2172/1832199

DO - 10.2172/1832199

M3 - Technical Report

ER -

Evidence for the Segregation of Impurities to Grain Boundaries in Multigrained Silicon Using AES and SIMS

Abstract

NREL Publication Number

Access to Document

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