@misc{1d5e1e214a5c45ad9a220a953ea7df12,
title = "Evidence of Buried Junctions in CdSeTe Absorbers",
abstract = "The introduction of selenium band gap gradients has been shown to be a promising path for improving CdTe devices. Controlling maximum selenium concentration during deposition should allow for better device performance. In this work cross-section electron beam induced current (EBIC) maps were measured for CdSeTe/CdTe devices with as-grown selenium concentration between 0 and 20 percent. Measured EBIC profiles show high collection in the middle of the absorber layer, which differs from past EBIC studies of CdSe/CdTe devices. Increasing as-deposited selenium concentrations resulted in increased collection at this mid-absorber location. Combined with a 2-dimensional numerical model, these results suggest a buried homo-junction in the absorber layer of the device. This buried junction may be associated with a number of composition dependent parameters including electron affinity and p-dopability. Understanding this collection profile and its implications for device performance may be key in optimizing CdSeTe/CdTe devices.",
keywords = "CdSeTe, CdTe, EBIC",
author = "Sean Jones and John Moseley and Brian Gorman and Mowafak Al-Jassim and Tursun Ablekim and Harvey Guthrey",
year = "2020",
language = "American English",
series = "Presented at the 47th IEEE Photovoltaic Specialist Conference (PVSC), 15 June - 21 August 2020",
type = "Other",
}