Evidence of Buried Junctions in CdSeTe Absorbers

Sean Jones, John Moseley, Brian Gorman, Mowafak Al-Jassim, Tursun Ablekim, Harvey Guthrey

Research output: NRELPoster


The introduction of selenium band gap gradients has been shown to be a promising path for improving CdTe devices. Controlling maximum selenium concentration during deposition should allow for better device performance. In this work cross-section electron beam induced current (EBIC) maps were measured for CdSeTe/CdTe devices with as-grown selenium concentration between 0 and 20 percent. Measured EBIC profiles show high collection in the middle of the absorber layer, which differs from past EBIC studies of CdSe/CdTe devices. Increasing as-deposited selenium concentrations resulted in increased collection at this mid-absorber location. Combined with a 2-dimensional numerical model, these results suggest a buried homo-junction in the absorber layer of the device. This buried junction may be associated with a number of composition dependent parameters including electron affinity and p-dopability. Understanding this collection profile and its implications for device performance may be key in optimizing CdSeTe/CdTe devices.
Original languageAmerican English
StatePublished - 2020

Publication series

NamePresented at the 47th IEEE Photovoltaic Specialist Conference (PVSC), 15 June - 21 August 2020

NREL Publication Number

  • NREL/PO-5K00-77007


  • CdSeTe
  • CdTe
  • EBIC


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