Evidence of Interface-Induced Persistent Photoconductivity in InP/In0.53Ga0.47As/InP Double Heterostructures Grown by Molecular-Beam Epitaxy

M. K. Hudait; Y. Lin; S. H. Goss; P. Smith; S. Bradley; L. J. Brillson; S. W. Johnston; R. K. Ahrenkiel; S. A. Ringel

doi:10.1063/1.1994948

Evidence of Interface-Induced Persistent Photoconductivity in InP/In0.53Ga0.47As/InP Double Heterostructures Grown by Molecular-Beam Epitaxy

M. K. Hudait, Y. Lin, S. H. Goss, P. Smith, S. Bradley, L. J. Brillson, S. W. Johnston, R. K. Ahrenkiel, S. A. Ringel

Materials Science

Ohio State University

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1 Scopus Citations

Abstract

The impact of interface switching sequences on interface quality and minority carrier recombination in In0.53 Ga0.47 AsInP double heterostructure (DH) grown by solid-source molecular-beam epitaxy (MBE) was studied. As2 exposure at the lower In0.53 Ga0.47 AsInP interface prior to In0.53 Ga0.47 As growth was found to cause enhanced As diffusion into the underlying InP that correlates with steadily increased photoconductive decay (PCD) lifetimes beyond the theoretical radiative and Auger limit. Low-temperature PCD measurements reveal that a persistent photoconductivity (PPC) process is responsible for the high "apparent" lifetimes. The PPC effect increases monotonically with As2 exposure on the InP surface, implying the involvement of interfacial defects in the carrier recombination dynamics of In0.53 Ga0.47 AsInP DHs grown by MBE.

Original language	American English
Article number	032106
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	3
DOIs	https://doi.org/10.1063/1.1994948 https://doi.org/10.1063/1.1994948
State	Published - 18 Jul 2005

NREL Publication Number

NREL/JA-520-38818

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Hudait, M. K., Lin, Y., Goss, S. H., Smith, P., Bradley, S., Brillson, L. J., Johnston, S. W., Ahrenkiel, R. K., & Ringel, S. A. (2005). Evidence of Interface-Induced Persistent Photoconductivity in InP/In0.53Ga0.47As/InP Double Heterostructures Grown by Molecular-Beam Epitaxy. Applied Physics Letters, 87(3), Article 032106. https://doi.org/10.1063/1.1994948, https://doi.org/10.1063/1.1994948

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title = "Evidence of Interface-Induced Persistent Photoconductivity in InP/In0.53Ga0.47As/InP Double Heterostructures Grown by Molecular-Beam Epitaxy",

abstract = "The impact of interface switching sequences on interface quality and minority carrier recombination in In0.53 Ga0.47 AsInP double heterostructure (DH) grown by solid-source molecular-beam epitaxy (MBE) was studied. As2 exposure at the lower In0.53 Ga0.47 AsInP interface prior to In0.53 Ga0.47 As growth was found to cause enhanced As diffusion into the underlying InP that correlates with steadily increased photoconductive decay (PCD) lifetimes beyond the theoretical radiative and Auger limit. Low-temperature PCD measurements reveal that a persistent photoconductivity (PPC) process is responsible for the high {"}apparent{"} lifetimes. The PPC effect increases monotonically with As2 exposure on the InP surface, implying the involvement of interfacial defects in the carrier recombination dynamics of In0.53 Ga0.47 AsInP DHs grown by MBE.",

author = "Hudait, {M. K.} and Y. Lin and Goss, {S. H.} and P. Smith and S. Bradley and Brillson, {L. J.} and Johnston, {S. W.} and Ahrenkiel, {R. K.} and Ringel, {S. A.}",

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Hudait, MK, Lin, Y, Goss, SH, Smith, P, Bradley, S, Brillson, LJ, Johnston, SW , Ahrenkiel, RK & Ringel, SA 2005, 'Evidence of Interface-Induced Persistent Photoconductivity in InP/In0.53Ga0.47As/InP Double Heterostructures Grown by Molecular-Beam Epitaxy', Applied Physics Letters, vol. 87, no. 3, 032106. https://doi.org/10.1063/1.1994948, https://doi.org/10.1063/1.1994948

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AU - Hudait, M. K.

AU - Lin, Y.

AU - Goss, S. H.

AU - Smith, P.

AU - Bradley, S.

AU - Brillson, L. J.

AU - Johnston, S. W.

AU - Ahrenkiel, R. K.

AU - Ringel, S. A.

PY - 2005/7/18

Y1 - 2005/7/18

N2 - The impact of interface switching sequences on interface quality and minority carrier recombination in In0.53 Ga0.47 AsInP double heterostructure (DH) grown by solid-source molecular-beam epitaxy (MBE) was studied. As2 exposure at the lower In0.53 Ga0.47 AsInP interface prior to In0.53 Ga0.47 As growth was found to cause enhanced As diffusion into the underlying InP that correlates with steadily increased photoconductive decay (PCD) lifetimes beyond the theoretical radiative and Auger limit. Low-temperature PCD measurements reveal that a persistent photoconductivity (PPC) process is responsible for the high "apparent" lifetimes. The PPC effect increases monotonically with As2 exposure on the InP surface, implying the involvement of interfacial defects in the carrier recombination dynamics of In0.53 Ga0.47 AsInP DHs grown by MBE.

AB - The impact of interface switching sequences on interface quality and minority carrier recombination in In0.53 Ga0.47 AsInP double heterostructure (DH) grown by solid-source molecular-beam epitaxy (MBE) was studied. As2 exposure at the lower In0.53 Ga0.47 AsInP interface prior to In0.53 Ga0.47 As growth was found to cause enhanced As diffusion into the underlying InP that correlates with steadily increased photoconductive decay (PCD) lifetimes beyond the theoretical radiative and Auger limit. Low-temperature PCD measurements reveal that a persistent photoconductivity (PPC) process is responsible for the high "apparent" lifetimes. The PPC effect increases monotonically with As2 exposure on the InP surface, implying the involvement of interfacial defects in the carrier recombination dynamics of In0.53 Ga0.47 AsInP DHs grown by MBE.

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Evidence of Interface-Induced Persistent Photoconductivity in InP/In0.53Ga0.47As/InP Double Heterostructures Grown by Molecular-Beam Epitaxy

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