Evidence of Internal Electric Fields in GaInP2 by Scanning Capacitance and Near-Field Scanning Optical Microscopy

    Research output: Contribution to journalArticlepeer-review

    Abstract

    GaInP2 is studied in cross section with the scanning capacitance and near-field scanning optical microscope. Our study shows significant differences in the electronic and optical properties between ordered single- and two-varient GaInP2. In single-varient samples, spatially uniform capacitance signal, photoluminescence intensity, and band gap are observed. In contrast, a spatially nonuniformcapacitance signal, photoluminescence intensity, and band gap are observed in samples with nominally uniform doping. Imging of the same regions by scanning capacitance and near-field scanning optical microscopes demonstrates that the photoluminescence (observed by the near-field scanning optical microscope) comes only from the n-type-like regions (observed by the scanning capacitance microscope)in lightly doped (n-typt) two-varient CaInP2. The local capacitance and photoluminescence measurements can be explained by the presence of internal electric fields in two-variant GaInP2.
    Original languageAmerican English
    Pages (from-to)1472-1478
    Number of pages7
    JournalPhysical Review B
    Volume56
    Issue number3
    DOIs
    StatePublished - 1997

    NREL Publication Number

    • NREL/JA-520-24287

    Fingerprint

    Dive into the research topics of 'Evidence of Internal Electric Fields in GaInP2 by Scanning Capacitance and Near-Field Scanning Optical Microscopy'. Together they form a unique fingerprint.

    Cite this