Evidence of the Meyer-Neldel Rule in InGaAsN Alloys and the Problem of Determining Trap Capture Cross Sections

Steven W. Johnston, Richard S. Crandall, Arthur Yelon

Research output: Contribution to journalArticlepeer-review

23 Scopus Citations

Abstract

Deep hole-traps in a series of InGaAsN alloys were measured using deep-level transient spectroscopy (DLTS). A series of as-grown and annealed metalorganic chemical-vapor-deposited and molecular-beam-epitaxy samples with varying composition were also studied. A deep hole trap with activation energy ranging between 0.5 and 0.8 eV in all samples is observed.

Original languageAmerican English
Pages (from-to)908-910
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number5
DOIs
StatePublished - 2003

NREL Publication Number

  • NREL/JA-520-33230

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