Abstract
Deep hole-traps in a series of InGaAsN alloys were measured using deep-level transient spectroscopy (DLTS). A series of as-grown and annealed metalorganic chemical-vapor-deposited and molecular-beam-epitaxy samples with varying composition were also studied. A deep hole trap with activation energy ranging between 0.5 and 0.8 eV in all samples is observed.
Original language | American English |
---|---|
Pages (from-to) | 908-910 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 83 |
Issue number | 5 |
DOIs | |
State | Published - 2003 |
NREL Publication Number
- NREL/JA-520-33230