Evidence of the Meyer-Neldel Rule in InGaAsN Alloys: Consequences for Photovoltaic Materials; Preprint

Research output: Contribution to conferencePaper

Abstract

We present data showing the potential adverse effects on photovoltaic device performance of all traps in InGaAsN. Deep-level transient spectroscopy measurements were performed on InGaAsN samples grown by both metal-organic chemical vapor deposition and RF plasma-assisted molecular-beam epitaxy. For each growth technique, we studied samples with varying nitrogen composition ranging from 0% to 2.2%. A deep hole trap with activation energy ranging between 0.5 and 0.8 eV is observed in all samples. These data clearly obey the Meyer-Neldel rule, which states that all traps have the same emission rate at the isokinetic temperature. A fit of our trap data gives an isokinetic temperature of 350 K, which means that both deep and shallow traps emit slowly at the operating temperature of solarcells-thus, the traps can be recombination centers.
Original languageAmerican English
Number of pages9
StatePublished - 2003
Event2003 Materials Research Society Spring Meeting - San Francisco, California
Duration: 21 Apr 200325 Apr 2003

Conference

Conference2003 Materials Research Society Spring Meeting
CitySan Francisco, California
Period21/04/0325/04/03

NREL Publication Number

  • NREL/CP-520-33229

Keywords

  • deep level transient spectroscopy (DLTS)
  • INGaAsN
  • isokinetic temperature
  • metal-organic chemical vapor deposition (MOCVD)
  • Meyer-Neldel rule
  • molecular beam epitaxy (MBE)
  • PV
  • RF plasma-assisted

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