Evidence of the Meyer-Neldel Rule in InGaAsN Alloys: Consequences for Photovoltaic Materials

Steven W. Johnston; Richard S. Crandall

doi:10.1557/proc-763-b2.6

Evidence of the Meyer-Neldel Rule in InGaAsN Alloys: Consequences for Photovoltaic Materials

Steven W. Johnston, Richard S. Crandall

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

2 Scopus Citations

Abstract

We present data showing the potential adverse effects on photovoltaic device performance of all traps in InGaAsN. Deep-level transient spectroscopy measurements were performed on InGaAsN samples grown by both metal-organic chemical vapor deposition and RF plasma-assisted molecular-beam epitaxy. For each growth technique, we studied samples with varying nitrogen composition ranging from 0% to 2.2%. A deep hole trap with activation energy ranging between 0.5 and 0.8 eV is observed in all samples. These data clearly obey the Meyer-Neldel rule, which states that all traps have the same emission rate at the isokinetic temperature. A fit of our trap data gives an isokinetic temperature of 350 K. We find that the emission time for all deep hole traps is on the order of milliseconds at room temperature. This means that both deep and shallow traps emit slowly at the operating temperature of solar cells - thus, the traps can be recombination centers.

Original language	American English
Pages	85-90
Number of pages	6
DOIs	https://doi.org/10.1557/proc-763-b2.6
State	Published - 2003
Event	Compound Semiconductor Photovoltaics: Materials Research Society Symposium - San Francisco, California Duration: 22 Apr 2003 → 25 Apr 2003

Conference

Conference	Compound Semiconductor Photovoltaics: Materials Research Society Symposium
City	San Francisco, California
Period	22/04/03 → 25/04/03

Bibliographical note

For preprint version including online full-text document, see; NREL/CP-520-33229

NREL Publication Number

NREL/CP-520-35984

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1557/proc-763-b2.6

Cite this

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title = "Evidence of the Meyer-Neldel Rule in InGaAsN Alloys: Consequences for Photovoltaic Materials",

abstract = "We present data showing the potential adverse effects on photovoltaic device performance of all traps in InGaAsN. Deep-level transient spectroscopy measurements were performed on InGaAsN samples grown by both metal-organic chemical vapor deposition and RF plasma-assisted molecular-beam epitaxy. For each growth technique, we studied samples with varying nitrogen composition ranging from 0% to 2.2%. A deep hole trap with activation energy ranging between 0.5 and 0.8 eV is observed in all samples. These data clearly obey the Meyer-Neldel rule, which states that all traps have the same emission rate at the isokinetic temperature. A fit of our trap data gives an isokinetic temperature of 350 K. We find that the emission time for all deep hole traps is on the order of milliseconds at room temperature. This means that both deep and shallow traps emit slowly at the operating temperature of solar cells - thus, the traps can be recombination centers.",

author = "Johnston, {Steven W.} and Crandall, {Richard S.}",

note = "For preprint version including online full-text document, see; NREL/CP-520-33229; Compound Semiconductor Photovoltaics: Materials Research Society Symposium ; Conference date: 22-04-2003 Through 25-04-2003",

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doi = "10.1557/proc-763-b2.6",

language = "American English",

pages = "85--90",

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AU - Johnston, Steven W.

AU - Crandall, Richard S.

N1 - For preprint version including online full-text document, see; NREL/CP-520-33229

PY - 2003

Y1 - 2003

N2 - We present data showing the potential adverse effects on photovoltaic device performance of all traps in InGaAsN. Deep-level transient spectroscopy measurements were performed on InGaAsN samples grown by both metal-organic chemical vapor deposition and RF plasma-assisted molecular-beam epitaxy. For each growth technique, we studied samples with varying nitrogen composition ranging from 0% to 2.2%. A deep hole trap with activation energy ranging between 0.5 and 0.8 eV is observed in all samples. These data clearly obey the Meyer-Neldel rule, which states that all traps have the same emission rate at the isokinetic temperature. A fit of our trap data gives an isokinetic temperature of 350 K. We find that the emission time for all deep hole traps is on the order of milliseconds at room temperature. This means that both deep and shallow traps emit slowly at the operating temperature of solar cells - thus, the traps can be recombination centers.

AB - We present data showing the potential adverse effects on photovoltaic device performance of all traps in InGaAsN. Deep-level transient spectroscopy measurements were performed on InGaAsN samples grown by both metal-organic chemical vapor deposition and RF plasma-assisted molecular-beam epitaxy. For each growth technique, we studied samples with varying nitrogen composition ranging from 0% to 2.2%. A deep hole trap with activation energy ranging between 0.5 and 0.8 eV is observed in all samples. These data clearly obey the Meyer-Neldel rule, which states that all traps have the same emission rate at the isokinetic temperature. A fit of our trap data gives an isokinetic temperature of 350 K. We find that the emission time for all deep hole traps is on the order of milliseconds at room temperature. This means that both deep and shallow traps emit slowly at the operating temperature of solar cells - thus, the traps can be recombination centers.

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DO - 10.1557/proc-763-b2.6

M3 - Paper

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T2 - Compound Semiconductor Photovoltaics: Materials Research Society Symposium

Y2 - 22 April 2003 through 25 April 2003

ER -

Evidence of the Meyer-Neldel Rule in InGaAsN Alloys: Consequences for Photovoltaic Materials

Abstract

Conference

Bibliographical note

NREL Publication Number

UN SDGs

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