Evolution of Defect Complexes in InGaAsN

Aurangzeb Khan, Sarah R. Kurtz, S. Prasad, S. W. Johnston

Research output: Contribution to conferencePaperpeer-review

1 Scopus Citations


The thermal annealing of nitrogen related traps in p-type InGaAsN and GaAsN is investigated by deep level transient spectroscopy (DLTS). Upon annealing, an apparent recovery of the photovoltaic properties correlates with changes in the DLTS data observed for InGaAsN and GaAsN diodes and solar cells, revealing that a nitrogen related E1 (E c-0.20 eV) center has an important role in governing the solar cell performance. The large electron capture cross section (∼8.9 × 10 -15 cm 2) of this center indicates that this defect may act as an efficient recombination center. Therefore, its complete removal by annealing or by some other process is essential for the high performance of GaInAsN solar cells. The internal quantum efficiency (IQE) data were modeled to quantify the change in material properties associated with this improvement upon annealing. Annealed cells with indium impurity (InGaAsN) show a slightly higher photoresponse, which could be due to low scattering caused by In-N pair formation after annealing.

Original languageAmerican English
Number of pages4
StatePublished - 2005
Event31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States
Duration: 3 Jan 20057 Jan 2005


Conference31st IEEE Photovoltaic Specialists Conference - 2005
Country/TerritoryUnited States
CityLake Buena Vista, FL

NREL Publication Number

  • NREL/CP-520-38892


Dive into the research topics of 'Evolution of Defect Complexes in InGaAsN'. Together they form a unique fingerprint.

Cite this