Evolution of Defect Complexes in InGaAsN

Aurangzeb Khan; Sarah R. Kurtz; S. Prasad; S. W. Johnston

Evolution of Defect Complexes in InGaAsN

Aurangzeb Khan, Sarah R. Kurtz, S. Prasad, S. W. Johnston

Materials Science

University of South Alabama

Research output: Contribution to conference › Paper › peer-review

1 Scopus Citations

Abstract

The thermal annealing of nitrogen related traps in p-type InGaAsN and GaAsN is investigated by deep level transient spectroscopy (DLTS). Upon annealing, an apparent recovery of the photovoltaic properties correlates with changes in the DLTS data observed for InGaAsN and GaAsN diodes and solar cells, revealing that a nitrogen related E1 (E _c-0.20 eV) center has an important role in governing the solar cell performance. The large electron capture cross section (∼8.9 × 10 ^-15 cm ²) of this center indicates that this defect may act as an efficient recombination center. Therefore, its complete removal by annealing or by some other process is essential for the high performance of GaInAsN solar cells. The internal quantum efficiency (IQE) data were modeled to quantify the change in material properties associated with this improvement upon annealing. Annealed cells with indium impurity (InGaAsN) show a slightly higher photoresponse, which could be due to low scattering caused by In-N pair formation after annealing.

Original language	American English
Pages	731-734
Number of pages	4
State	Published - 2005
Event	31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States Duration: 3 Jan 2005 → 7 Jan 2005

Conference

Conference	31st IEEE Photovoltaic Specialists Conference - 2005
Country/Territory	United States
City	Lake Buena Vista, FL
Period	3/01/05 → 7/01/05

NREL Publication Number

NREL/CP-520-38892

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

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title = "Evolution of Defect Complexes in InGaAsN",

abstract = "The thermal annealing of nitrogen related traps in p-type InGaAsN and GaAsN is investigated by deep level transient spectroscopy (DLTS). Upon annealing, an apparent recovery of the photovoltaic properties correlates with changes in the DLTS data observed for InGaAsN and GaAsN diodes and solar cells, revealing that a nitrogen related E1 (E c-0.20 eV) center has an important role in governing the solar cell performance. The large electron capture cross section (∼8.9 × 10 -15 cm 2) of this center indicates that this defect may act as an efficient recombination center. Therefore, its complete removal by annealing or by some other process is essential for the high performance of GaInAsN solar cells. The internal quantum efficiency (IQE) data were modeled to quantify the change in material properties associated with this improvement upon annealing. Annealed cells with indium impurity (InGaAsN) show a slightly higher photoresponse, which could be due to low scattering caused by In-N pair formation after annealing.",

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year = "2005",

language = "American English",

pages = "731--734",

note = "31st IEEE Photovoltaic Specialists Conference - 2005 ; Conference date: 03-01-2005 Through 07-01-2005",

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TY - CONF

T1 - Evolution of Defect Complexes in InGaAsN

AU - Khan, Aurangzeb

AU - Kurtz, Sarah R.

AU - Prasad, S.

AU - Johnston, S. W.

PY - 2005

Y1 - 2005

N2 - The thermal annealing of nitrogen related traps in p-type InGaAsN and GaAsN is investigated by deep level transient spectroscopy (DLTS). Upon annealing, an apparent recovery of the photovoltaic properties correlates with changes in the DLTS data observed for InGaAsN and GaAsN diodes and solar cells, revealing that a nitrogen related E1 (E c-0.20 eV) center has an important role in governing the solar cell performance. The large electron capture cross section (∼8.9 × 10 -15 cm 2) of this center indicates that this defect may act as an efficient recombination center. Therefore, its complete removal by annealing or by some other process is essential for the high performance of GaInAsN solar cells. The internal quantum efficiency (IQE) data were modeled to quantify the change in material properties associated with this improvement upon annealing. Annealed cells with indium impurity (InGaAsN) show a slightly higher photoresponse, which could be due to low scattering caused by In-N pair formation after annealing.

AB - The thermal annealing of nitrogen related traps in p-type InGaAsN and GaAsN is investigated by deep level transient spectroscopy (DLTS). Upon annealing, an apparent recovery of the photovoltaic properties correlates with changes in the DLTS data observed for InGaAsN and GaAsN diodes and solar cells, revealing that a nitrogen related E1 (E c-0.20 eV) center has an important role in governing the solar cell performance. The large electron capture cross section (∼8.9 × 10 -15 cm 2) of this center indicates that this defect may act as an efficient recombination center. Therefore, its complete removal by annealing or by some other process is essential for the high performance of GaInAsN solar cells. The internal quantum efficiency (IQE) data were modeled to quantify the change in material properties associated with this improvement upon annealing. Annealed cells with indium impurity (InGaAsN) show a slightly higher photoresponse, which could be due to low scattering caused by In-N pair formation after annealing.

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M3 - Paper

AN - SCOPUS:27944496557

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T2 - 31st IEEE Photovoltaic Specialists Conference - 2005

Y2 - 3 January 2005 through 7 January 2005

ER -

Evolution of Defect Complexes in InGaAsN

Abstract

Conference

NREL Publication Number

UN SDGs

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