Evolution of Electronic States in GaAs1-xNx Probed by Resonant Raman Spectroscopy

A. Mascarenhas; M. J. Seong; S. Yoon; J. C. Verley; J. F. Geisz; M. C. Hanna

doi:10.1103/PhysRevB.68.233201

Evolution of Electronic States in GaAs1-xNx Probed by Resonant Raman Spectroscopy

A. Mascarenhas, M. J. Seong, S. Yoon, J. C. Verley, J. F. Geisz, M. C. Hanna

Chemistry and Nanoscience

Research output: Contribution to journal › Article › peer-review

21 Scopus Citations

Abstract

Two distinct maxima E_W and E_W′ are observed in the resonant Raman-scattering profile for the LO phonon asymmetric linewidth broadening in GaAs_1−xN_x and are attributed to states arising from a splitting of the quadruply degenerate conduction band near the L point. The data provide further insight into the physics underlying the giant band-gap bowing observed in GaAs_1−xN_x, as well as reveal asymmetric linewidth broadening to be a powerful signature for studying strongly localized impurity states in semiconductors.

Original language	American English
Number of pages	3
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	68
Issue number	23
DOIs	https://doi.org/10.1103/PhysRevB.68.233201 https://doi.org/10.1103/PhysRevB.68.233201
State	Published - 11 Dec 2003

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NREL/JA-590-35925

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title = "Evolution of Electronic States in GaAs1-xNx Probed by Resonant Raman Spectroscopy",

abstract = "Two distinct maxima EW and EW′ are observed in the resonant Raman-scattering profile for the LO phonon asymmetric linewidth broadening in GaAs1−xNx and are attributed to states arising from a splitting of the quadruply degenerate conduction band near the L point. The data provide further insight into the physics underlying the giant band-gap bowing observed in GaAs1−xNx, as well as reveal asymmetric linewidth broadening to be a powerful signature for studying strongly localized impurity states in semiconductors.",

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AU - Seong, M. J.

AU - Yoon, S.

AU - Verley, J. C.

AU - Geisz, J. F.

AU - Hanna, M. C.

PY - 2003/12/11

Y1 - 2003/12/11

N2 - Two distinct maxima EW and EW′ are observed in the resonant Raman-scattering profile for the LO phonon asymmetric linewidth broadening in GaAs1−xNx and are attributed to states arising from a splitting of the quadruply degenerate conduction band near the L point. The data provide further insight into the physics underlying the giant band-gap bowing observed in GaAs1−xNx, as well as reveal asymmetric linewidth broadening to be a powerful signature for studying strongly localized impurity states in semiconductors.

AB - Two distinct maxima EW and EW′ are observed in the resonant Raman-scattering profile for the LO phonon asymmetric linewidth broadening in GaAs1−xNx and are attributed to states arising from a splitting of the quadruply degenerate conduction band near the L point. The data provide further insight into the physics underlying the giant band-gap bowing observed in GaAs1−xNx, as well as reveal asymmetric linewidth broadening to be a powerful signature for studying strongly localized impurity states in semiconductors.

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U2 - 10.1103/PhysRevB.68.233201

DO - 10.1103/PhysRevB.68.233201

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JO - Physical Review B - Condensed Matter and Materials Physics

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ER -

Evolution of Electronic States in GaAs1-xNx Probed by Resonant Raman Spectroscopy

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