Evolution of Superclusters and Delocalized States in GaAs1-xNx

B. Fluegel; K. Alberi; D. A. Beaton; S. A. Crooker; A. J. Ptak; A. Mascarenhas

doi:10.1103/PhysRevB.86.205203

Evolution of Superclusters and Delocalized States in GaAs1-xNx

B. Fluegel, K. Alberi, D. A. Beaton, S. A. Crooker, A. J. Ptak, A. Mascarenhas

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Abstract

The evolution of individual nitrogen cluster bound states into an extended state infinite supercluster in dilute GaAs _1-xN _x was probed through temperature and intensity-dependent, time-resolved and magnetophotoluminescence (PL) measurements. Samples with compositions less than 0.23% N exhibit PL behavior that is consistent with emission from the extended states of the conduction band. Near a composition of 0.23% N, a discontinuity develops between the extended state PL peak energy and the photoluminescence excitation absorption edge. The existence of dual localized/delocalized state behavior near this composition signals the formation of an N supercluster just below the conduction band edge. The infinite supercluster is fully developed by 0.32% N.

Original language	American English
Article number	205203
Number of pages	6
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	86
Issue number	20
DOIs	https://doi.org/10.1103/PhysRevB.86.205203 https://doi.org/10.1103/PhysRevB.86.205203
State	Published - 21 Nov 2012

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NREL/JA-5900-56970

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title = "Evolution of Superclusters and Delocalized States in GaAs1-xNx",

abstract = "The evolution of individual nitrogen cluster bound states into an extended state infinite supercluster in dilute GaAs 1-xN x was probed through temperature and intensity-dependent, time-resolved and magnetophotoluminescence (PL) measurements. Samples with compositions less than 0.23% N exhibit PL behavior that is consistent with emission from the extended states of the conduction band. Near a composition of 0.23% N, a discontinuity develops between the extended state PL peak energy and the photoluminescence excitation absorption edge. The existence of dual localized/delocalized state behavior near this composition signals the formation of an N supercluster just below the conduction band edge. The infinite supercluster is fully developed by 0.32% N.",

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AU - Fluegel, B.

AU - Alberi, K.

AU - Beaton, D. A.

AU - Crooker, S. A.

AU - Ptak, A. J.

AU - Mascarenhas, A.

PY - 2012/11/21

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N2 - The evolution of individual nitrogen cluster bound states into an extended state infinite supercluster in dilute GaAs 1-xN x was probed through temperature and intensity-dependent, time-resolved and magnetophotoluminescence (PL) measurements. Samples with compositions less than 0.23% N exhibit PL behavior that is consistent with emission from the extended states of the conduction band. Near a composition of 0.23% N, a discontinuity develops between the extended state PL peak energy and the photoluminescence excitation absorption edge. The existence of dual localized/delocalized state behavior near this composition signals the formation of an N supercluster just below the conduction band edge. The infinite supercluster is fully developed by 0.32% N.

AB - The evolution of individual nitrogen cluster bound states into an extended state infinite supercluster in dilute GaAs 1-xN x was probed through temperature and intensity-dependent, time-resolved and magnetophotoluminescence (PL) measurements. Samples with compositions less than 0.23% N exhibit PL behavior that is consistent with emission from the extended states of the conduction band. Near a composition of 0.23% N, a discontinuity develops between the extended state PL peak energy and the photoluminescence excitation absorption edge. The existence of dual localized/delocalized state behavior near this composition signals the formation of an N supercluster just below the conduction band edge. The infinite supercluster is fully developed by 0.32% N.

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JF - Physical Review B - Condensed Matter and Materials Physics

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Evolution of Superclusters and Delocalized States in GaAs1-xNx

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