Evolution of Superclusters and Delocalized States in GaAs1-xNx

B. Fluegel, K. Alberi, D. A. Beaton, S. A. Crooker, A. J. Ptak, A. Mascarenhas

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13 Scopus Citations


The evolution of individual nitrogen cluster bound states into an extended state infinite supercluster in dilute GaAs 1-xN x was probed through temperature and intensity-dependent, time-resolved and magnetophotoluminescence (PL) measurements. Samples with compositions less than 0.23% N exhibit PL behavior that is consistent with emission from the extended states of the conduction band. Near a composition of 0.23% N, a discontinuity develops between the extended state PL peak energy and the photoluminescence excitation absorption edge. The existence of dual localized/delocalized state behavior near this composition signals the formation of an N supercluster just below the conduction band edge. The infinite supercluster is fully developed by 0.32% N.

Original languageAmerican English
Article number205203
Number of pages6
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number20
StatePublished - 21 Nov 2012

NREL Publication Number

  • NREL/JA-5900-56970


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