Evolution of the Band Gaps and Band Edges of Quaternary Ga1-yInyAsxSb1-x/InAs Alloys as a Function of Composition

Evolution of the Band Gaps and Band Edges of Quaternary Ga1-yInyAsxSb1-x/InAs Alloys as a Function of Composition

Chemistry and Nanoscience

Research output: Contribution to conference › Paper

Original language	American English
Pages	123-124
Number of pages	2
State	Published - 2005
Event	Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors (ICPS-27) - Flagstaff, Arizona Duration: 26 Jul 2004 → 30 Jul 2004

Conference

Conference	Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors (ICPS-27)
City	Flagstaff, Arizona
Period	26/07/04 → 30/07/04

NREL Publication Number

NREL/CP-590-40719

Cite this

@conference{bca3310b0e7e4aee968f8a20dd36ae17,

title = "Evolution of the Band Gaps and Band Edges of Quaternary Ga1-yInyAsxSb1-x/InAs Alloys as a Function of Composition",

author = "NREL",

year = "2005",

language = "American English",

pages = "123--124",

note = "Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors (ICPS-27) ; Conference date: 26-07-2004 Through 30-07-2004",

}