Ex Situ Bismuth Doping for Efficient CdSeTe Thin-Film Solar Cells with Open-Circuit Voltages Exceeding 900 mV

Sabin Neupane; Deng-Bing Li; Abasi Abudulimu; Manoj Jamarkattel; Chun-Sheng Jiang; Yeming Xian; Xiaomeng Duan; Adam Phillips; Michael Heben; Randall Ellingson; Feng Yan; Dingyuan Lu; Dan Mao; Nicholas Miller; James Becker; William Huber; Gang Xiong; Yanfa Yan

doi:10.1016/j.joule.2024.09.013

Ex Situ Bismuth Doping for Efficient CdSeTe Thin-Film Solar Cells with Open-Circuit Voltages Exceeding 900 mV

Sabin Neupane, Deng-Bing Li, Abasi Abudulimu, Manoj Jamarkattel, Chun-Sheng Jiang, Yeming Xian, Xiaomeng Duan, Adam Phillips, Michael Heben, Randall Ellingson, Feng Yan, Dingyuan Lu, Dan Mao, Nicholas Miller, James Becker, William Huber, Gang Xiong, Yanfa Yan

Materials Science

Research output: Contribution to journal › Article › peer-review

Abstract

The focus of CdSeTe thin-film solar cell doping has transitioned from copper (Cu) doping to group V doping. In situ group V doping has resulted in a new record power conversion efficiency (PCE) of 23.1%, with open-circuit voltages (VOCs) exceeding the 900 mV mark. Here, we report that ex situ bismuth (Bi)-doped CdSeTe thin-film solar cells show VOCs exceeding 900 mV and a champion PCE of 20.6%. Characterizations revealed that the Se-rich CdSeTe region near the front junction promotes Bi ions to occupy the anion sites and dope this region weakly p-type. Bi ions in the CdTe-dominating back surface region occupy the cation sites and are oxidized. This ex situ Bi doping with BiF3 as a dopant precursor offers several advantages, including simplicity, high tolerance to the processing environment, and no requirement of additional Cd vapor or special activation processes, making it highly adaptable for researchers to explore efficient Bi-doped CdSeTe thin-film solar cells.

Original language	American English
Journal	Joule
DOIs	https://doi.org/10.1016/j.joule.2024.09.013
State	Published - 2024

NREL Publication Number

NREL/JA-5K00-92414

Keywords

bismuth doping
CdTe solar cell
ex situ doping
group V doping

Access to Document

10.1016/j.joule.2024.09.013

Cite this

Neupane, S., Li, D.-B., Abudulimu, A., Jamarkattel, M., Jiang, C.-S., Xian, Y., Duan, X., Phillips, A., Heben, M., Ellingson, R., Yan, F., Lu, D., Mao, D., Miller, N., Becker, J., Huber, W., Xiong, G., & Yan, Y. (2024). Ex Situ Bismuth Doping for Efficient CdSeTe Thin-Film Solar Cells with Open-Circuit Voltages Exceeding 900 mV. Joule. https://doi.org/10.1016/j.joule.2024.09.013

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title = "Ex Situ Bismuth Doping for Efficient CdSeTe Thin-Film Solar Cells with Open-Circuit Voltages Exceeding 900 mV",

abstract = "The focus of CdSeTe thin-film solar cell doping has transitioned from copper (Cu) doping to group V doping. In situ group V doping has resulted in a new record power conversion efficiency (PCE) of 23.1%, with open-circuit voltages (VOCs) exceeding the 900 mV mark. Here, we report that ex situ bismuth (Bi)-doped CdSeTe thin-film solar cells show VOCs exceeding 900 mV and a champion PCE of 20.6%. Characterizations revealed that the Se-rich CdSeTe region near the front junction promotes Bi ions to occupy the anion sites and dope this region weakly p-type. Bi ions in the CdTe-dominating back surface region occupy the cation sites and are oxidized. This ex situ Bi doping with BiF3 as a dopant precursor offers several advantages, including simplicity, high tolerance to the processing environment, and no requirement of additional Cd vapor or special activation processes, making it highly adaptable for researchers to explore efficient Bi-doped CdSeTe thin-film solar cells.",

keywords = "bismuth doping, CdTe solar cell, ex situ doping, group V doping",

author = "Sabin Neupane and Deng-Bing Li and Abasi Abudulimu and Manoj Jamarkattel and Chun-Sheng Jiang and Yeming Xian and Xiaomeng Duan and Adam Phillips and Michael Heben and Randall Ellingson and Feng Yan and Dingyuan Lu and Dan Mao and Nicholas Miller and James Becker and William Huber and Gang Xiong and Yanfa Yan",

year = "2024",

doi = "10.1016/j.joule.2024.09.013",

language = "American English",

journal = "Joule",

issn = "2542-4351",

publisher = "Cell Press",

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TY - JOUR

T1 - Ex Situ Bismuth Doping for Efficient CdSeTe Thin-Film Solar Cells with Open-Circuit Voltages Exceeding 900 mV

AU - Neupane, Sabin

AU - Li, Deng-Bing

AU - Abudulimu, Abasi

AU - Jamarkattel, Manoj

AU - Jiang, Chun-Sheng

AU - Xian, Yeming

AU - Duan, Xiaomeng

AU - Phillips, Adam

AU - Heben, Michael

AU - Ellingson, Randall

AU - Yan, Feng

AU - Lu, Dingyuan

AU - Mao, Dan

AU - Miller, Nicholas

AU - Becker, James

AU - Huber, William

AU - Xiong, Gang

AU - Yan, Yanfa

PY - 2024

Y1 - 2024

N2 - The focus of CdSeTe thin-film solar cell doping has transitioned from copper (Cu) doping to group V doping. In situ group V doping has resulted in a new record power conversion efficiency (PCE) of 23.1%, with open-circuit voltages (VOCs) exceeding the 900 mV mark. Here, we report that ex situ bismuth (Bi)-doped CdSeTe thin-film solar cells show VOCs exceeding 900 mV and a champion PCE of 20.6%. Characterizations revealed that the Se-rich CdSeTe region near the front junction promotes Bi ions to occupy the anion sites and dope this region weakly p-type. Bi ions in the CdTe-dominating back surface region occupy the cation sites and are oxidized. This ex situ Bi doping with BiF3 as a dopant precursor offers several advantages, including simplicity, high tolerance to the processing environment, and no requirement of additional Cd vapor or special activation processes, making it highly adaptable for researchers to explore efficient Bi-doped CdSeTe thin-film solar cells.

AB - The focus of CdSeTe thin-film solar cell doping has transitioned from copper (Cu) doping to group V doping. In situ group V doping has resulted in a new record power conversion efficiency (PCE) of 23.1%, with open-circuit voltages (VOCs) exceeding the 900 mV mark. Here, we report that ex situ bismuth (Bi)-doped CdSeTe thin-film solar cells show VOCs exceeding 900 mV and a champion PCE of 20.6%. Characterizations revealed that the Se-rich CdSeTe region near the front junction promotes Bi ions to occupy the anion sites and dope this region weakly p-type. Bi ions in the CdTe-dominating back surface region occupy the cation sites and are oxidized. This ex situ Bi doping with BiF3 as a dopant precursor offers several advantages, including simplicity, high tolerance to the processing environment, and no requirement of additional Cd vapor or special activation processes, making it highly adaptable for researchers to explore efficient Bi-doped CdSeTe thin-film solar cells.

KW - bismuth doping

KW - CdTe solar cell

KW - ex situ doping

KW - group V doping

U2 - 10.1016/j.joule.2024.09.013

DO - 10.1016/j.joule.2024.09.013

M3 - Article

SN - 2542-4351

JO - Joule

JF - Joule

ER -

Ex Situ Bismuth Doping for Efficient CdSeTe Thin-Film Solar Cells with Open-Circuit Voltages Exceeding 900 mV

Abstract

NREL Publication Number

Keywords

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