Abstract
A bilayer coating of Al2O3 and TiO2 is used to simultaneously achieve excellent passivation and low reflectivity on p-type silicon. This coating is targeted for achieving high efficiency n-wafer Si solar cells, where both passivation and anti-reflection (AR) are needed at the front-side p-type emitter. It could also be valuable for front-side passivation and AR of rear-emitter and interdigitatedback contact p-wafer cells. We achieve high minority carrier lifetimes1 ms, as well as a nearly 2% decrease in absolute reflectivity, as compared to a standard silicon nitride AR coating.
| Original language | American English |
|---|---|
| Number of pages | 5 |
| State | Published - 2012 |
| Event | 2012 IEEE Photovoltaic Specialists Conference - Austin, Texas Duration: 3 Jun 2012 → 8 Jun 2012 |
Conference
| Conference | 2012 IEEE Photovoltaic Specialists Conference |
|---|---|
| City | Austin, Texas |
| Period | 3/06/12 → 8/06/12 |
NREL Publication Number
- NREL/CP-5200-54121
Keywords
- anti-reflection
- atomic layer deposition
- minority-carrier lifetime
- n-wafer silicon
- passivation