Excimer Laser-Processed Oxide-Passivated Silicon Solar Cells of 19.5-Percent Efficiency

Research output: Contribution to journal › Article

Original language	American English
Pages (from-to)	249-251
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	EDL-8
Issue number	5
DOIs	https://doi.org/10.1109/EDL.1987.26619
State	Published - 1987

Work performed by Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee

NREL Publication Number

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title = "Excimer Laser-Processed Oxide-Passivated Silicon Solar Cells of 19.5-Percent Efficiency",

author = "NREL",

note = "Work performed by Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee",

year = "1987",

doi = "10.1109/EDL.1987.26619",

language = "American English",

volume = "EDL-8",

pages = "249--251",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - Excimer Laser-Processed Oxide-Passivated Silicon Solar Cells of 19.5-Percent Efficiency

AU - NREL, null

N1 - Work performed by Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee

PY - 1987

Y1 - 1987

U2 - 10.1109/EDL.1987.26619

DO - 10.1109/EDL.1987.26619

M3 - Article

SN - 0741-3106

VL - EDL-8

SP - 249

EP - 251

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 5

ER -