Excitation-Dependent Recombination and Diffusion Near an Isolated Dislocation in GaAs: Article No. 093712

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NLR Publication Number

@article{f8408b1fb49243ddabfbd821a52ff757,

title = "Excitation-Dependent Recombination and Diffusion Near an Isolated Dislocation in GaAs: Article No. 093712",

author = "T.H. Gfroerer and C.M. Crowley and C.M. Read and M.W. Wanlass",

year = "2012",

doi = "10.1063/1.4709434",

language = "American English",

volume = "111",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - Excitation-Dependent Recombination and Diffusion Near an Isolated Dislocation in GaAs

T2 - Article No. 093712

AU - Gfroerer, T.H.

AU - Crowley, C.M.

AU - Read, C.M.

AU - Wanlass, M.W.

PY - 2012

Y1 - 2012

U2 - 10.1063/1.4709434

DO - 10.1063/1.4709434

M3 - Article

SN - 0021-8979

VL - 111

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

ER -