Exciton Pattern Generation in GaAs/Al/x/Ga/1-x/As Multiple Quantum Wells

B. Fluegel, K. Alberi, L. Bhusal, A. Mascarenhas, D. W. Snoke, G. Karunasiri, L. N. Pfeiffer, K. West

Research output: Contribution to journalArticlepeer-review

5 Scopus Citations


Exciton photoluminescence pattern generation is investigated in multiple quantum wells. High-contrast outer rings and localized bright spots are generated using efficient field-assisted upconversion of laser light whose photon energy lies below the energy of the luminescing quantum well transition. Time-resolved images of the bright spots reveal unexpected dynamics that are not explained by two-dimensional rate equations for generation and diffusion. This behavior can be understood as a result of three-dimensional transport in the vertically extended samples.

Original languageAmerican English
Article number195320
Number of pages6
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number19
StatePublished - 16 May 2011

NREL Publication Number

  • NREL/JA-5900-50361


  • photoluminescence
  • quantum wells


Dive into the research topics of 'Exciton Pattern Generation in GaAs/Al/x/Ga/1-x/As Multiple Quantum Wells'. Together they form a unique fingerprint.

Cite this