Experimental and Theoretical Investigation of the Conduction Band Edge of GaNxP1-x

M. Güngerich, P. J. Klar, W. Heimbrodt, G. Weiser, J. F. Geisz, C. Harris, A. Lindsay, E. P. O'Reilly

Research output: Contribution to journalArticlepeer-review

27 Scopus Citations


We show that a two-level band-anticrossing (BAC) model fails to describe the evolution of N-related states in Ga Nx P1-x. Band structure calculations prove that a two-level model describes these states in ordered GaNP supercells. Photocurrent measurements support a BAC-related blueshift of the GaP-like direct band gap in disordered GaNP, but calculations and electromodulated absorption and pressure studies show that the wide energy distribution of the lower-lying N-related states leads to the anticrossing interaction involving many N levels in disordered GaNP.

Original languageAmerican English
Article number241202
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number24
StatePublished - 2006

NREL Publication Number

  • NREL/JA-520-41475


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