Experimental and Theoretical Investigation of the Conduction Band Edge of GaNxP1-x

M. Güngerich; P. J. Klar; W. Heimbrodt; G. Weiser; J. F. Geisz; C. Harris; A. Lindsay; E. P. O'Reilly

doi:10.1103/PhysRevB.74.241202

Experimental and Theoretical Investigation of the Conduction Band Edge of GaNxP1-x

M. Güngerich, P. J. Klar, W. Heimbrodt, G. Weiser, J. F. Geisz, C. Harris, A. Lindsay, E. P. O'Reilly

Chemistry and Nanoscience

Research output: Contribution to journal › Article › peer-review

27 Scopus Citations

Abstract

We show that a two-level band-anticrossing (BAC) model fails to describe the evolution of N-related states in Ga Nx P1-x. Band structure calculations prove that a two-level model describes these states in ordered GaNP supercells. Photocurrent measurements support a BAC-related blueshift of the GaP-like direct band gap in disordered GaNP, but calculations and electromodulated absorption and pressure studies show that the wide energy distribution of the lower-lying N-related states leads to the anticrossing interaction involving many N levels in disordered GaNP.

Original language	American English
Article number	241202
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	74
Issue number	24
DOIs	https://doi.org/10.1103/PhysRevB.74.241202 https://doi.org/10.1103/PhysRevB.74.241202
State	Published - 2006

NREL Publication Number

NREL/JA-520-41475

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Güngerich, M., Klar, P. J., Heimbrodt, W., Weiser, G., Geisz, J. F., Harris, C., Lindsay, A., & O'Reilly, E. P. (2006). Experimental and Theoretical Investigation of the Conduction Band Edge of GaNxP1-x. Physical Review B - Condensed Matter and Materials Physics, 74(24), Article 241202. https://doi.org/10.1103/PhysRevB.74.241202, https://doi.org/10.1103/PhysRevB.74.241202

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AU - Klar, P. J.

AU - Heimbrodt, W.

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AU - Geisz, J. F.

AU - Harris, C.

AU - Lindsay, A.

AU - O'Reilly, E. P.

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AB - We show that a two-level band-anticrossing (BAC) model fails to describe the evolution of N-related states in Ga Nx P1-x. Band structure calculations prove that a two-level model describes these states in ordered GaNP supercells. Photocurrent measurements support a BAC-related blueshift of the GaP-like direct band gap in disordered GaNP, but calculations and electromodulated absorption and pressure studies show that the wide energy distribution of the lower-lying N-related states leads to the anticrossing interaction involving many N levels in disordered GaNP.

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Experimental and Theoretical Investigation of the Conduction Band Edge of GaNxP1-x

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