Experimental Results of GaInP2/GaAs/Ge Triple Junction Cell Development for Space Power Systems

doi:10.1109/PVSC.1996.563977

Experimental Results of GaInP2/GaAs/Ge Triple Junction Cell Development for Space Power Systems

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Abstract

This document describes the successful demonstration of high efficiency, large area monolithic triple-junction, n on p, GaInP2/GaAs/Ge cells. The highest cell efficiency (cell size: 2 cm x 2 cm) measured to date is 25.7%, under 1 sun, AM0 illumination. A very uniform distribution of cell efficiency across a 3' diameter wafer is also achieved. The average efficiency of 164, 2cm x 2 cm triplejunction cells and 52 cell-interconnect-cover (CIC) assemblies are 22.6% and 21.9%, respectively. The results of temperature coefficient, 1 MeV electron irradiation and thermal cycle measurements (for CICs) are also reported.

Original language	American English
Pages	183 -186
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.1996.563977
State	Published - 1996
Event	Twenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C. Duration: 13 May 1996 → 17 May 1996

Conference

Conference	Twenty Fifth IEEE Photovoltaic Specialists Conference
City	Washington, D.C.
Period	13/05/96 → 17/05/96

NREL Publication Number

NREL/CP-22378

Access to Document

10.1109/PVSC.1996.563977

Cite this

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title = "Experimental Results of GaInP2/GaAs/Ge Triple Junction Cell Development for Space Power Systems",

abstract = "This document describes the successful demonstration of high efficiency, large area monolithic triple-junction, n on p, GaInP2/GaAs/Ge cells. The highest cell efficiency (cell size: 2 cm x 2 cm) measured to date is 25.7%, under 1 sun, AM0 illumination. A very uniform distribution of cell efficiency across a 3' diameter wafer is also achieved. The average efficiency of 164, 2cm x 2 cm triplejunction cells and 52 cell-interconnect-cover (CIC) assemblies are 22.6% and 21.9%, respectively. The results of temperature coefficient, 1 MeV electron irradiation and thermal cycle measurements (for CICs) are also reported.",

author = "NREL",

year = "1996",

doi = "10.1109/PVSC.1996.563977",

language = "American English",

pages = "183 --186",

note = "Twenty Fifth IEEE Photovoltaic Specialists Conference ; Conference date: 13-05-1996 Through 17-05-1996",

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T1 - Experimental Results of GaInP2/GaAs/Ge Triple Junction Cell Development for Space Power Systems

AU - NREL, null

PY - 1996

Y1 - 1996

N2 - This document describes the successful demonstration of high efficiency, large area monolithic triple-junction, n on p, GaInP2/GaAs/Ge cells. The highest cell efficiency (cell size: 2 cm x 2 cm) measured to date is 25.7%, under 1 sun, AM0 illumination. A very uniform distribution of cell efficiency across a 3' diameter wafer is also achieved. The average efficiency of 164, 2cm x 2 cm triplejunction cells and 52 cell-interconnect-cover (CIC) assemblies are 22.6% and 21.9%, respectively. The results of temperature coefficient, 1 MeV electron irradiation and thermal cycle measurements (for CICs) are also reported.

AB - This document describes the successful demonstration of high efficiency, large area monolithic triple-junction, n on p, GaInP2/GaAs/Ge cells. The highest cell efficiency (cell size: 2 cm x 2 cm) measured to date is 25.7%, under 1 sun, AM0 illumination. A very uniform distribution of cell efficiency across a 3' diameter wafer is also achieved. The average efficiency of 164, 2cm x 2 cm triplejunction cells and 52 cell-interconnect-cover (CIC) assemblies are 22.6% and 21.9%, respectively. The results of temperature coefficient, 1 MeV electron irradiation and thermal cycle measurements (for CICs) are also reported.

U2 - 10.1109/PVSC.1996.563977

DO - 10.1109/PVSC.1996.563977

M3 - Paper

SP - 183

EP - 186

T2 - Twenty Fifth IEEE Photovoltaic Specialists Conference

Y2 - 13 May 1996 through 17 May 1996

ER -

Experimental Results of GaInP2/GaAs/Ge Triple Junction Cell Development for Space Power Systems

Abstract

Conference

NREL Publication Number

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