Experimental Study of Solar Cell Performance Versus Dislocation Density

S. M. Vernon, S. P. Tobin, M. M. Al-Jassim, R. K. Ahrenkiel, K. M. Jones, B. M. Keyes

Research output: Contribution to conferencePaperpeer-review

13 Scopus Citations

Abstract

The results of an experimental study of solar cell performance and material properties as a function of dislocation density are reported. Buffer layers of GaAs1-yPy (y = 0-0.32) have been used to controllably introduce dislocations into GaAs-on-GaAs cells. Bulk space-charge recombination is found to be the dominant mechanism operating at high defect densities. The experimental results indicate that a dislocation density ≤5 × 105 cm-2 is needed for the production of high-efficiency GaAs-on-Si solar cells. Results to date have yielded concentrator cells with AM1.5 efficiencies of up to 20% at 210 suns in GaAs-on-Si layers containing 1 × 107 dislocations/cm-2, as compared with GaAs homoepitaxial cells that are 29% efficient under concentrated sunlight.

Original languageAmerican English
Pages211-216
Number of pages6
StatePublished - May 1990
Externally publishedYes
EventTwenty First IEEE Photovoltaic Specialists Conference - 1990 Part 2 (of 2) - Kissimimee, FL, USA
Duration: 21 May 199025 May 1990

Conference

ConferenceTwenty First IEEE Photovoltaic Specialists Conference - 1990 Part 2 (of 2)
CityKissimimee, FL, USA
Period21/05/9025/05/90

Bibliographical note

Work performed by Spire Corporation, Bedford, Massachusetts, and Solar Energy Research Institute, Golden, Colorado

NREL Publication Number

  • ACNR/CP-213-12254

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