Experimental Study of Solar Cell Performance Versus Dislocation Density

S. M. Vernon; S. P. Tobin; M. M. Al-Jassim; R. K. Ahrenkiel; K. M. Jones; B. M. Keyes

Experimental Study of Solar Cell Performance Versus Dislocation Density

S. M. Vernon, S. P. Tobin, M. M. Al-Jassim, R. K. Ahrenkiel, K. M. Jones, B. M. Keyes

Materials, Chemical, and Computational Science Research Operations

Research output: Contribution to conference › Paper › peer-review

13 Scopus Citations

Abstract

The results of an experimental study of solar cell performance and material properties as a function of dislocation density are reported. Buffer layers of GaAs_1-yP_y (y = 0-0.32) have been used to controllably introduce dislocations into GaAs-on-GaAs cells. Bulk space-charge recombination is found to be the dominant mechanism operating at high defect densities. The experimental results indicate that a dislocation density ≤5 × 10⁵ cm^-2 is needed for the production of high-efficiency GaAs-on-Si solar cells. Results to date have yielded concentrator cells with AM1.5 efficiencies of up to 20% at 210 suns in GaAs-on-Si layers containing 1 × 10⁷ dislocations/cm^-2, as compared with GaAs homoepitaxial cells that are 29% efficient under concentrated sunlight.

Original language	American English
Pages	211-216
Number of pages	6
State	Published - May 1990
Event	Twenty First IEEE Photovoltaic Specialists Conference - 1990 Part 2 (of 2) - Kissimimee, FL, USA Duration: 21 May 1990 → 25 May 1990

Conference

Conference	Twenty First IEEE Photovoltaic Specialists Conference - 1990 Part 2 (of 2)
City	Kissimimee, FL, USA
Period	21/05/90 → 25/05/90

Bibliographical note

Work performed by Spire Corporation, Bedford, Massachusetts, and Solar Energy Research Institute, Golden, Colorado

NREL Publication Number

ACNR/CP-213-12254

Cite this

@conference{c676c1889e3f4b28be9dd0aa1da4b12e,

title = "Experimental Study of Solar Cell Performance Versus Dislocation Density",

abstract = "The results of an experimental study of solar cell performance and material properties as a function of dislocation density are reported. Buffer layers of GaAs1-yPy (y = 0-0.32) have been used to controllably introduce dislocations into GaAs-on-GaAs cells. Bulk space-charge recombination is found to be the dominant mechanism operating at high defect densities. The experimental results indicate that a dislocation density ≤5 × 105 cm-2 is needed for the production of high-efficiency GaAs-on-Si solar cells. Results to date have yielded concentrator cells with AM1.5 efficiencies of up to 20% at 210 suns in GaAs-on-Si layers containing 1 × 107 dislocations/cm-2, as compared with GaAs homoepitaxial cells that are 29% efficient under concentrated sunlight.",

author = "Vernon, {S. M.} and Tobin, {S. P.} and Al-Jassim, {M. M.} and Ahrenkiel, {R. K.} and Jones, {K. M.} and Keyes, {B. M.}",

note = "Work performed by Spire Corporation, Bedford, Massachusetts, and Solar Energy Research Institute, Golden, Colorado; Twenty First IEEE Photovoltaic Specialists Conference - 1990 Part 2 (of 2) ; Conference date: 21-05-1990 Through 25-05-1990",

year = "1990",

month = may,

language = "American English",

pages = "211--216",

}

TY - CONF

T1 - Experimental Study of Solar Cell Performance Versus Dislocation Density

AU - Vernon, S. M.

AU - Tobin, S. P.

AU - Al-Jassim, M. M.

AU - Ahrenkiel, R. K.

AU - Jones, K. M.

AU - Keyes, B. M.

N1 - Work performed by Spire Corporation, Bedford, Massachusetts, and Solar Energy Research Institute, Golden, Colorado

PY - 1990/5

Y1 - 1990/5

N2 - The results of an experimental study of solar cell performance and material properties as a function of dislocation density are reported. Buffer layers of GaAs1-yPy (y = 0-0.32) have been used to controllably introduce dislocations into GaAs-on-GaAs cells. Bulk space-charge recombination is found to be the dominant mechanism operating at high defect densities. The experimental results indicate that a dislocation density ≤5 × 105 cm-2 is needed for the production of high-efficiency GaAs-on-Si solar cells. Results to date have yielded concentrator cells with AM1.5 efficiencies of up to 20% at 210 suns in GaAs-on-Si layers containing 1 × 107 dislocations/cm-2, as compared with GaAs homoepitaxial cells that are 29% efficient under concentrated sunlight.

AB - The results of an experimental study of solar cell performance and material properties as a function of dislocation density are reported. Buffer layers of GaAs1-yPy (y = 0-0.32) have been used to controllably introduce dislocations into GaAs-on-GaAs cells. Bulk space-charge recombination is found to be the dominant mechanism operating at high defect densities. The experimental results indicate that a dislocation density ≤5 × 105 cm-2 is needed for the production of high-efficiency GaAs-on-Si solar cells. Results to date have yielded concentrator cells with AM1.5 efficiencies of up to 20% at 210 suns in GaAs-on-Si layers containing 1 × 107 dislocations/cm-2, as compared with GaAs homoepitaxial cells that are 29% efficient under concentrated sunlight.

UR - http://www.scopus.com/inward/record.url?scp=0025420651&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0025420651

SP - 211

EP - 216

T2 - Twenty First IEEE Photovoltaic Specialists Conference - 1990 Part 2 (of 2)

Y2 - 21 May 1990 through 25 May 1990

ER -

Experimental Study of Solar Cell Performance Versus Dislocation Density

Abstract

Conference

Bibliographical note

NREL Publication Number

Other files and links

Fingerprint

Cite this