Explanation of Red Spectral Shifts at CdTe Grain Boundaries

J. Moseley, M. M. Al-Jassim, H. R. Moutinho, H. L. Guthrey, W. K. Metzger, R. K. Ahrenkiel

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We use cathodoluminescence spectrum imaging to investigate the nanoscale properties of CdTe thin-films for solar cells deposited by close-spaced sublimation. Luminescence emission is detected (bands) at ∼1.32 eV and ∼1.50 eV, which are consistent with Z- and Y-bands. For the grains in the as-deposited films, there is a significant redshift in the transition energies near the grain boundaries. The high grain boundary recombination velocity and the donor-acceptor pair (DAP) mechanism of the Z-band transition account for the contrast between grain boundaries and the grain interior. By applying DAP theory, we estimate the concentration of the shallow donor species participating in the Z-band transition to be ∼1017 cm-3.

Original languageAmerican English
Article numberArticle No. 233103
Number of pages4
JournalApplied Physics Letters
Issue number23
StatePublished - 2 Dec 2013

NREL Publication Number

  • NREL/JA-5200-60454


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