Explanation of Red Spectral Shifts at CdTe Grain Boundaries

J. Moseley; M. M. Al-Jassim; H. R. Moutinho; H. L. Guthrey; W. K. Metzger; R. K. Ahrenkiel

doi:10.1063/1.4838015

Explanation of Red Spectral Shifts at CdTe Grain Boundaries

J. Moseley, M. M. Al-Jassim, H. R. Moutinho, H. L. Guthrey, W. K. Metzger, R. K. Ahrenkiel

Materials Science

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Abstract

We use cathodoluminescence spectrum imaging to investigate the nanoscale properties of CdTe thin-films for solar cells deposited by close-spaced sublimation. Luminescence emission is detected (bands) at ∼1.32 eV and ∼1.50 eV, which are consistent with Z- and Y-bands. For the grains in the as-deposited films, there is a significant redshift in the transition energies near the grain boundaries. The high grain boundary recombination velocity and the donor-acceptor pair (DAP) mechanism of the Z-band transition account for the contrast between grain boundaries and the grain interior. By applying DAP theory, we estimate the concentration of the shallow donor species participating in the Z-band transition to be ∼10¹⁷ cm^-3.

Original language	American English
Article number	Article No. 233103
Number of pages	4
Journal	Applied Physics Letters
Volume	103
Issue number	23
DOIs	https://doi.org/10.1063/1.4838015 https://doi.org/10.1063/1.4838015
State	Published - 2 Dec 2013

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NREL/JA-5200-60454

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title = "Explanation of Red Spectral Shifts at CdTe Grain Boundaries",

abstract = "We use cathodoluminescence spectrum imaging to investigate the nanoscale properties of CdTe thin-films for solar cells deposited by close-spaced sublimation. Luminescence emission is detected (bands) at ∼1.32 eV and ∼1.50 eV, which are consistent with Z- and Y-bands. For the grains in the as-deposited films, there is a significant redshift in the transition energies near the grain boundaries. The high grain boundary recombination velocity and the donor-acceptor pair (DAP) mechanism of the Z-band transition account for the contrast between grain boundaries and the grain interior. By applying DAP theory, we estimate the concentration of the shallow donor species participating in the Z-band transition to be ∼1017 cm-3.",

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T1 - Explanation of Red Spectral Shifts at CdTe Grain Boundaries

AU - Moseley, J.

AU - Al-Jassim, M. M.

AU - Moutinho, H. R.

AU - Guthrey, H. L.

AU - Metzger, W. K.

AU - Ahrenkiel, R. K.

PY - 2013/12/2

Y1 - 2013/12/2

N2 - We use cathodoluminescence spectrum imaging to investigate the nanoscale properties of CdTe thin-films for solar cells deposited by close-spaced sublimation. Luminescence emission is detected (bands) at ∼1.32 eV and ∼1.50 eV, which are consistent with Z- and Y-bands. For the grains in the as-deposited films, there is a significant redshift in the transition energies near the grain boundaries. The high grain boundary recombination velocity and the donor-acceptor pair (DAP) mechanism of the Z-band transition account for the contrast between grain boundaries and the grain interior. By applying DAP theory, we estimate the concentration of the shallow donor species participating in the Z-band transition to be ∼1017 cm-3.

AB - We use cathodoluminescence spectrum imaging to investigate the nanoscale properties of CdTe thin-films for solar cells deposited by close-spaced sublimation. Luminescence emission is detected (bands) at ∼1.32 eV and ∼1.50 eV, which are consistent with Z- and Y-bands. For the grains in the as-deposited films, there is a significant redshift in the transition energies near the grain boundaries. The high grain boundary recombination velocity and the donor-acceptor pair (DAP) mechanism of the Z-band transition account for the contrast between grain boundaries and the grain interior. By applying DAP theory, we estimate the concentration of the shallow donor species participating in the Z-band transition to be ∼1017 cm-3.

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U2 - 10.1063/1.4838015

DO - 10.1063/1.4838015

M3 - Article

AN - SCOPUS:84889851434

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VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - Article No. 233103

ER -

Explanation of Red Spectral Shifts at CdTe Grain Boundaries

Abstract

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