Exploration of GaInTlP and Related Tl-containing III-V Alloys for Photovoltaics

Exploration of GaInTlP and Related Tl-containing III-V Alloys for Photovoltaics

Research output: Contribution to conference › Paper

Abstract

This report discusses the results of an attempt to grow GaInTlP for applications as a 1-eV material for the third junction of a GaInP/GaAs/3rd-junction high-efficiency solar cell. Although early indications from the literature were promising, we are unable to produce crystalline homogeneous material, and so we conclude that this material is not a promising candidate for such applications asphotovoltaics.

Original language	American English
Number of pages	7
State	Published - 1998
Event	NCPV Program Review Meeting - Denver, Colorado Duration: 8 Sep 1998 → 11 Sep 1998

Conference

Conference	NCPV Program Review Meeting
City	Denver, Colorado
Period	8/09/98 → 11/09/98

NREL Publication Number

NREL/CP-520-25737

Access to Document

https://www.nrel.gov/docs/fy99osti/25737.pdf

Cite this

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title = "Exploration of GaInTlP and Related Tl-containing III-V Alloys for Photovoltaics",

abstract = "This report discusses the results of an attempt to grow GaInTlP for applications as a 1-eV material for the third junction of a GaInP/GaAs/3rd-junction high-efficiency solar cell. Although early indications from the literature were promising, we are unable to produce crystalline homogeneous material, and so we conclude that this material is not a promising candidate for such applications asphotovoltaics.",

author = "NREL",

year = "1998",

language = "American English",

note = "NCPV Program Review Meeting ; Conference date: 08-09-1998 Through 11-09-1998",

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AU - NREL, null

PY - 1998

Y1 - 1998

N2 - This report discusses the results of an attempt to grow GaInTlP for applications as a 1-eV material for the third junction of a GaInP/GaAs/3rd-junction high-efficiency solar cell. Although early indications from the literature were promising, we are unable to produce crystalline homogeneous material, and so we conclude that this material is not a promising candidate for such applications asphotovoltaics.

AB - This report discusses the results of an attempt to grow GaInTlP for applications as a 1-eV material for the third junction of a GaInP/GaAs/3rd-junction high-efficiency solar cell. Although early indications from the literature were promising, we are unable to produce crystalline homogeneous material, and so we conclude that this material is not a promising candidate for such applications asphotovoltaics.

M3 - Paper

T2 - NCPV Program Review Meeting

Y2 - 8 September 1998 through 11 September 1998

ER -

Exploration of GaInTlP and Related Tl-containing III-V Alloys for Photovoltaics

Abstract

Conference

NREL Publication Number

Access to Document

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Cite this