Exploring the Phase Space of Zn2SbN3, a Novel Semiconducting Nitride

Allison Mis, Stephan Lany, Geoff Brennecka, Adele Tamboli

Research output: Contribution to journalArticlepeer-review

6 Scopus Citations


The novel semiconductor Zn2SbN3is one of a growing list of ternary nitrides with promise for optoelectronic and energy applications. Previous work by Arcaet al.[Materials Horizons, 2019,6, 1669-1974] first reported synthesis of this material, but did not explore the effects of growth conditions on material formation. In this work, we present a semi-automated study of the relationship between growth conditions and crystallinityviahigh-throughput RF sputtering and a custom X-ray diffraction analysis routine. Zn2SbN3is found to crystallize in a wide range of growth conditions, and the formation of several contaminant phases is examined. Electron microscopy of these secondary phases, caused both by off-stoichiometry and by growth conditions, provides insight into the growth mechanisms of Zn2SbN3. Computational work relates this material to other Zn-based ternary nitrides and offers an explanation for the difficulty of growing cation-ordered material despite the wide range of growth conditions explored.

Original languageAmerican English
Pages (from-to)13904-13913
Number of pages10
JournalJournal of Materials Chemistry C
Issue number39
StatePublished - 21 Oct 2021

Bibliographical note

Publisher Copyright:
© The Royal Society of Chemistry 2021.

NREL Publication Number

  • NREL/JA-5K00-80812


  • cryallinity
  • growth conditions
  • optoelectronics
  • semiconductors
  • ternary nitrides
  • Zn2SbN3


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