Abstract
The novel semiconductor Zn2SbN3is one of a growing list of ternary nitrides with promise for optoelectronic and energy applications. Previous work by Arcaet al.[Materials Horizons, 2019,6, 1669-1974] first reported synthesis of this material, but did not explore the effects of growth conditions on material formation. In this work, we present a semi-automated study of the relationship between growth conditions and crystallinityviahigh-throughput RF sputtering and a custom X-ray diffraction analysis routine. Zn2SbN3is found to crystallize in a wide range of growth conditions, and the formation of several contaminant phases is examined. Electron microscopy of these secondary phases, caused both by off-stoichiometry and by growth conditions, provides insight into the growth mechanisms of Zn2SbN3. Computational work relates this material to other Zn-based ternary nitrides and offers an explanation for the difficulty of growing cation-ordered material despite the wide range of growth conditions explored.
Original language | American English |
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Pages (from-to) | 13904-13913 |
Number of pages | 10 |
Journal | Journal of Materials Chemistry C |
Volume | 9 |
Issue number | 39 |
DOIs | |
State | Published - 21 Oct 2021 |
Bibliographical note
Publisher Copyright:© The Royal Society of Chemistry 2021.
NREL Publication Number
- NREL/JA-5K00-80812
Keywords
- cryallinity
- growth conditions
- optoelectronics
- semiconductors
- ternary nitrides
- Zn2SbN3