Abstract
GaAs/GaInP double heterostructures are index matched with ZnSe hemispheres to increase the coupling of photoluminescence out of the device. We measure external quantum efficiencies as large as 96% at room temperature using a bolometric calibration technique. When the carriers are optically injected near the bandgap energy, the luminescence is blueshifted by up to 1.4 kT. In this case, externalefficiencies exceeding 97.5% would yield optical refrigeration in the solid state.
Original language | American English |
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Pages (from-to) | 143-147 |
Number of pages | 5 |
Journal | Applied Physics A Solids and Surfaces |
Volume | 64 |
Issue number | 2 |
DOIs | |
State | Published - 1997 |
NREL Publication Number
- NREL/JA-451-23053