External Radiative Quantum Efficiency of 96% from a GaAs/GaInP Heterostructure

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    GaAs/GaInP double heterostructures are index matched with ZnSe hemispheres to increase the coupling of photoluminescence out of the device. We measure external quantum efficiencies as large as 96% at room temperature using a bolometric calibration technique. When the carriers are optically injected near the bandgap energy, the luminescence is blueshifted by up to 1.4 kT. In this case, externalefficiencies exceeding 97.5% would yield optical refrigeration in the solid state.
    Original languageAmerican English
    Pages (from-to)143-147
    Number of pages5
    JournalApplied Physics A Solids and Surfaces
    Issue number2
    StatePublished - 1997

    NREL Publication Number

    • NREL/JA-451-23053


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