Extrinsic n-Type Doping of Cd3As2 Thin Films: Article No. 061901

Anthony Rice, Jocienne Nelson, Chase Brooks, Stephan Lany, Kirstin Alberi

Research output: Contribution to journalArticlepeer-review

1 Scopus Citations

Abstract

Cd3As2 provides an excellent platform for studying the physics of three-dimensional Dirac semimetals due to its stability as well as its compatibility with thin film growth. Crystals made using both bulk and thin film synthesis are unintentionally doped n-type, and other than introducing Zn to reduce the carrier concentration, no efforts have been reported to alter this intrinsic doping without major changes to the band structure. Here, group VI elements Te and Se are introduced during epitaxy to increase the electron concentration of the films. Starting from an unintentionally doped electron concentration of 1-2 x 10^17 cm-3, concentrations of up to 3 x 10^18 cm-3 are achieved. Analysis of Shubnikov-de Haas oscillations reveals good agreement in calculated effective mass and Fermi velocity of highly doped films with unintentionally doped single crystals with similar electron concentrations. The density functional theory is also performed to study the effects of group VI substitutions and confirms no strong perturbations in the electronic structure. This work ultimately demonstrates tunability in the carrier concentration using extrinsic dopants without substantial changes in the band structure, allowing for intentional design of Fermi-level position for device applications.
Original languageAmerican English
Number of pages5
JournalApplied Physics Letters
Volume122
Issue number6
DOIs
StatePublished - 2023

NREL Publication Number

  • NREL/JA-5K00-84923

Keywords

  • density functional theory
  • doping
  • epitaxy
  • thin films
  • topological materials

Fingerprint

Dive into the research topics of 'Extrinsic n-Type Doping of Cd3As2 Thin Films: Article No. 061901'. Together they form a unique fingerprint.

Cite this