Abstract
The photovoltaic effect in indium-tin-oxide (ITO)/CuInSe//2 heterostructures has been demonstrated. An AM1 efficiency of 8. 5% has been measured for a single crystal device. The thin-film analogue had a conversion efficiency of 2. 08%. Although the photovoltaic effect was observed in devices with ITO deposited at room temperature, improved performance resulted at T//s//u//b approximately equals 180 degree C. Degradation in short-circuit current was noted after operation at 200 degree C for 10 hours in ambient air.
| Original language | American English |
|---|---|
| Pages | 541-544 |
| Number of pages | 4 |
| State | Published - 1978 |
| Externally published | Yes |
| Event | Conf Rec IEEE Photovoltaic Spec Conf 13th - Washington, DC, USA Duration: 5 Jun 1978 → 8 Jun 1978 |
Conference
| Conference | Conf Rec IEEE Photovoltaic Spec Conf 13th |
|---|---|
| City | Washington, DC, USA |
| Period | 5/06/78 → 8/06/78 |
NREL Publication Number
- ACNR/CP-213-3185
