Fabrication and Characterization of ITO/CuInSe2 Photovoltaic Heterojunctions

L. L. Kazmerski, Peter Sheldon

Research output: Contribution to conferencePaperpeer-review

15 Scopus Citations


The photovoltaic effect in indium-tin-oxide (ITO)/CuInSe//2 heterostructures has been demonstrated. An AM1 efficiency of 8. 5% has been measured for a single crystal device. The thin-film analogue had a conversion efficiency of 2. 08%. Although the photovoltaic effect was observed in devices with ITO deposited at room temperature, improved performance resulted at T//s//u//b approximately equals 180 degree C. Degradation in short-circuit current was noted after operation at 200 degree C for 10 hours in ambient air.

Original languageAmerican English
Number of pages4
StatePublished - 1978
Externally publishedYes
EventConf Rec IEEE Photovoltaic Spec Conf 13th - Washington, DC, USA
Duration: 5 Jun 19788 Jun 1978


ConferenceConf Rec IEEE Photovoltaic Spec Conf 13th
CityWashington, DC, USA

NREL Publication Number

  • ACNR/CP-213-3185


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