Fabrication and Characterization of MIM Diodes Based on Nb/Nb 2O5 via a Rapid Screening Technique

Prakash Periasamy; Joseph J. Berry; Arrelaine A. Dameron; Jeremy D. Bergeson; David S. Ginley; Ryan P. O'Hayre; Philip A. Parilla

doi:10.1002/adma.201101115

Fabrication and Characterization of MIM Diodes Based on Nb/Nb 2O5 via a Rapid Screening Technique

Prakash Periasamy, Joseph J. Berry, Arrelaine A. Dameron, Jeremy D. Bergeson, David S. Ginley, Ryan P. O'Hayre, Philip A. Parilla

Research output: Contribution to journal › Article › peer-review

71 Scopus Citations

Abstract

A novel and facile fabrication technique using a bent-wire (M2) point-contact configuration is used to fabricate and analyze different metal-insulator-metal (M1/I/M2) diode systems based on Nb/Nb ₂O ₅ (M1/I), enabling a study of work function influence on diode behavior. Excellent diode performance is achieved for Nb/Nb ₂O ₅/Pt, Nb/Nb ₂O ₅/Au, Nb/Nb ₂O ₅/Ag and Nb/Nb ₂O ₅/Cu demonstrating significant promise for ultra-fast rectification applications. The asymmetry and non-linearity values of the Nb/Nb ₂O ₅/Pt are 1500 and 4 at 0.5 V, respectively.

Original language	American English
Pages (from-to)	3080-3085
Number of pages	6
Journal	Advanced Materials
Volume	23
Issue number	27
DOIs	https://doi.org/10.1002/adma.201101115 https://doi.org/10.1002/adma.201101115
State	Published - 2011

NREL Publication Number

NREL/JA-5200-52600

Keywords

anodic oxidation
metal-insulator-metal structures
MIM diodes
Nb/Nb O
rectenna

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@article{02df8e520b1c4cef9b378d31abcff724,

title = "Fabrication and Characterization of MIM Diodes Based on Nb/Nb 2O5 via a Rapid Screening Technique",

abstract = "A novel and facile fabrication technique using a bent-wire (M2) point-contact configuration is used to fabricate and analyze different metal-insulator-metal (M1/I/M2) diode systems based on Nb/Nb 2O 5 (M1/I), enabling a study of work function influence on diode behavior. Excellent diode performance is achieved for Nb/Nb 2O 5/Pt, Nb/Nb 2O 5/Au, Nb/Nb 2O 5/Ag and Nb/Nb 2O 5/Cu demonstrating significant promise for ultra-fast rectification applications. The asymmetry and non-linearity values of the Nb/Nb 2O 5/Pt are 1500 and 4 at 0.5 V, respectively.",

keywords = "anodic oxidation, metal-insulator-metal structures, MIM diodes, Nb/Nb O, rectenna",

author = "Prakash Periasamy and Berry, {Joseph J.} and Dameron, {Arrelaine A.} and Bergeson, {Jeremy D.} and Ginley, {David S.} and O'Hayre, {Ryan P.} and Parilla, {Philip A.}",

year = "2011",

doi = "10.1002/adma.201101115",

language = "American English",

volume = "23",

pages = "3080--3085",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "27",

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T1 - Fabrication and Characterization of MIM Diodes Based on Nb/Nb 2O5 via a Rapid Screening Technique

AU - Periasamy, Prakash

AU - Berry, Joseph J.

AU - Dameron, Arrelaine A.

AU - Bergeson, Jeremy D.

AU - Ginley, David S.

AU - O'Hayre, Ryan P.

AU - Parilla, Philip A.

PY - 2011

Y1 - 2011

N2 - A novel and facile fabrication technique using a bent-wire (M2) point-contact configuration is used to fabricate and analyze different metal-insulator-metal (M1/I/M2) diode systems based on Nb/Nb 2O 5 (M1/I), enabling a study of work function influence on diode behavior. Excellent diode performance is achieved for Nb/Nb 2O 5/Pt, Nb/Nb 2O 5/Au, Nb/Nb 2O 5/Ag and Nb/Nb 2O 5/Cu demonstrating significant promise for ultra-fast rectification applications. The asymmetry and non-linearity values of the Nb/Nb 2O 5/Pt are 1500 and 4 at 0.5 V, respectively.

AB - A novel and facile fabrication technique using a bent-wire (M2) point-contact configuration is used to fabricate and analyze different metal-insulator-metal (M1/I/M2) diode systems based on Nb/Nb 2O 5 (M1/I), enabling a study of work function influence on diode behavior. Excellent diode performance is achieved for Nb/Nb 2O 5/Pt, Nb/Nb 2O 5/Au, Nb/Nb 2O 5/Ag and Nb/Nb 2O 5/Cu demonstrating significant promise for ultra-fast rectification applications. The asymmetry and non-linearity values of the Nb/Nb 2O 5/Pt are 1500 and 4 at 0.5 V, respectively.

KW - anodic oxidation

KW - metal-insulator-metal structures

KW - MIM diodes

KW - Nb/Nb O

KW - rectenna

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DO - 10.1002/adma.201101115

M3 - Article

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SN - 0935-9648

VL - 23

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JO - Advanced Materials

JF - Advanced Materials

IS - 27

ER -

Fabrication and Characterization of MIM Diodes Based on Nb/Nb 2O5 via a Rapid Screening Technique

Abstract

NREL Publication Number

Keywords

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