Fabrication and Characterization of MIM Diodes Based on Nb/Nb 2O5 via a Rapid Screening Technique

Prakash Periasamy, Joseph J. Berry, Arrelaine A. Dameron, Jeremy D. Bergeson, David S. Ginley, Ryan P. O'Hayre, Philip A. Parilla

Research output: Contribution to journalArticlepeer-review

69 Scopus Citations

Abstract

A novel and facile fabrication technique using a bent-wire (M2) point-contact configuration is used to fabricate and analyze different metal-insulator-metal (M1/I/M2) diode systems based on Nb/Nb 2O 5 (M1/I), enabling a study of work function influence on diode behavior. Excellent diode performance is achieved for Nb/Nb 2O 5/Pt, Nb/Nb 2O 5/Au, Nb/Nb 2O 5/Ag and Nb/Nb 2O 5/Cu demonstrating significant promise for ultra-fast rectification applications. The asymmetry and non-linearity values of the Nb/Nb 2O 5/Pt are 1500 and 4 at 0.5 V, respectively.

Original languageAmerican English
Pages (from-to)3080-3085
Number of pages6
JournalAdvanced Materials
Volume23
Issue number27
DOIs
StatePublished - 2011

NREL Publication Number

  • NREL/JA-5200-52600

Keywords

  • anodic oxidation
  • metal-insulator-metal structures
  • MIM diodes
  • Nb/Nb O
  • rectenna

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