Fabrication and Electrical Characterization of 0.55eV N-on-P InGaAs TPV Devices

Fabrication and Electrical Characterization of 0.55eV N-on-P InGaAs TPV Devices

Research output: Contribution to conference › Paper

Abstract

Results are presented on the characterization and testing of lattice-mismatched 0.55eV InGaAs/InP thermophotovoltaic (TPV) cells. A robust cell fabrication technique amenable to high throughput production is presented. A versatile light and dark I-V set up capable of fast screening of the TPV cells and an innovative approach for screening high performance cells are presented. We also report onthe effect of lattice-matched InAsP and InAlAs back surface field layers on the performance of the TPV cells.

Original language	American English
Pages	427-437
Number of pages	11
State	Published - 1999
Event	Thermophotovoltaic Generation of Electricity: Fourth NREL Conference - Denver, Colorado Duration: 11 Oct 1998 → 14 Oct 1998

Conference

Conference	Thermophotovoltaic Generation of Electricity: Fourth NREL Conference
City	Denver, Colorado
Period	11/10/98 → 14/10/98

NREL Publication Number

NREL/CP-520-27230

Cite this

@conference{ef437fa468b04cee95087a7476f5ad4e,

title = "Fabrication and Electrical Characterization of 0.55eV N-on-P InGaAs TPV Devices",

abstract = "Results are presented on the characterization and testing of lattice-mismatched 0.55eV InGaAs/InP thermophotovoltaic (TPV) cells. A robust cell fabrication technique amenable to high throughput production is presented. A versatile light and dark I-V set up capable of fast screening of the TPV cells and an innovative approach for screening high performance cells are presented. We also report onthe effect of lattice-matched InAsP and InAlAs back surface field layers on the performance of the TPV cells.",

author = "NREL",

year = "1999",

language = "American English",

pages = "427--437",

note = "Thermophotovoltaic Generation of Electricity: Fourth NREL Conference ; Conference date: 11-10-1998 Through 14-10-1998",

}

TY - CONF

T1 - Fabrication and Electrical Characterization of 0.55eV N-on-P InGaAs TPV Devices

AU - NREL, null

PY - 1999

Y1 - 1999

N2 - Results are presented on the characterization and testing of lattice-mismatched 0.55eV InGaAs/InP thermophotovoltaic (TPV) cells. A robust cell fabrication technique amenable to high throughput production is presented. A versatile light and dark I-V set up capable of fast screening of the TPV cells and an innovative approach for screening high performance cells are presented. We also report onthe effect of lattice-matched InAsP and InAlAs back surface field layers on the performance of the TPV cells.

AB - Results are presented on the characterization and testing of lattice-mismatched 0.55eV InGaAs/InP thermophotovoltaic (TPV) cells. A robust cell fabrication technique amenable to high throughput production is presented. A versatile light and dark I-V set up capable of fast screening of the TPV cells and an innovative approach for screening high performance cells are presented. We also report onthe effect of lattice-matched InAsP and InAlAs back surface field layers on the performance of the TPV cells.

M3 - Paper

SP - 427

EP - 437

T2 - Thermophotovoltaic Generation of Electricity: Fourth NREL Conference

Y2 - 11 October 1998 through 14 October 1998

ER -

Fabrication and Electrical Characterization of 0.55eV N-on-P InGaAs TPV Devices

Abstract

Conference

NREL Publication Number

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