Fabrication and Electrical Characterization of 0.55eV N-on-P InGaAs TPV Devices

Research output: Contribution to conferencePaper

Abstract

Results are presented on the characterization and testing of lattice-mismatched 0.55eV InGaAs/InP thermophotovoltaic (TPV) cells. A robust cell fabrication technique amenable to high throughput production is presented. A versatile light and dark I-V set up capable of fast screening of the TPV cells and an innovative approach for screening high performance cells are presented. We also report onthe effect of lattice-matched InAsP and InAlAs back surface field layers on the performance of the TPV cells.
Original languageAmerican English
Pages427-437
Number of pages11
StatePublished - 1999
EventThermophotovoltaic Generation of Electricity: Fourth NREL Conference - Denver, Colorado
Duration: 11 Oct 199814 Oct 1998

Conference

ConferenceThermophotovoltaic Generation of Electricity: Fourth NREL Conference
CityDenver, Colorado
Period11/10/9814/10/98

NREL Publication Number

  • NREL/CP-520-27230

Fingerprint

Dive into the research topics of 'Fabrication and Electrical Characterization of 0.55eV N-on-P InGaAs TPV Devices'. Together they form a unique fingerprint.

Cite this