Fabrication and Physics of CdTe Devices by Sputtering: Final Report, 1 March 2005 - 30 November 2008

Fabrication and Physics of CdTe Devices by Sputtering: Final Report, 1 March 2005 - 30 November 2008

Research output: NREL › Subcontract Report

Abstract

Work to understand CdS/CdTe solar cell device physics; increase magnetron sputtering rate (while keeping high device quality); reduce thickness of CdTe layers (while keeping voltage and fill factor).

Original language	American English
Number of pages	80
State	Published - 2009

Bibliographical note

Work performed by the University of Toledo, Toledo, Ohio

NREL Publication Number

NREL/SR-520-45398

Keywords

admittance spectroscopy
CdS
CdTe
deposition rate
device physics
device quality
magnetron sputtering
PV
solar cells
spectroscopic ellipsometry

Access to Document

https://www.nrel.gov/docs/fy09osti/45398.pdf

Cite this

@misc{ebfb3dc8095a4702bc422d4b28cd305e,

title = "Fabrication and Physics of CdTe Devices by Sputtering: Final Report, 1 March 2005 - 30 November 2008",

abstract = "Work to understand CdS/CdTe solar cell device physics; increase magnetron sputtering rate (while keeping high device quality); reduce thickness of CdTe layers (while keeping voltage and fill factor).",

keywords = "admittance spectroscopy, CdS, CdTe, deposition rate, device physics, device quality, magnetron sputtering, PV, solar cells, spectroscopic ellipsometry",

author = "NREL",

note = "Work performed by the University of Toledo, Toledo, Ohio",

year = "2009",

language = "American English",

type = "Other",

}

TY - GEN

T1 - Fabrication and Physics of CdTe Devices by Sputtering: Final Report, 1 March 2005 - 30 November 2008

AU - NREL, null

N1 - Work performed by the University of Toledo, Toledo, Ohio

PY - 2009

Y1 - 2009

N2 - Work to understand CdS/CdTe solar cell device physics; increase magnetron sputtering rate (while keeping high device quality); reduce thickness of CdTe layers (while keeping voltage and fill factor).

AB - Work to understand CdS/CdTe solar cell device physics; increase magnetron sputtering rate (while keeping high device quality); reduce thickness of CdTe layers (while keeping voltage and fill factor).

KW - admittance spectroscopy

KW - CdS

KW - CdTe

KW - deposition rate

KW - device physics

KW - device quality

KW - magnetron sputtering

KW - PV

KW - solar cells

KW - spectroscopic ellipsometry

M3 - Subcontract Report

ER -

Fabrication and Physics of CdTe Devices by Sputtering: Final Report, 1 March 2005 - 30 November 2008

Abstract

Bibliographical note

NREL Publication Number

Keywords

Access to Document

Fingerprint

Cite this