Fabrication and Use of Large-Grain Templates for Epitaxial Deposition of Semiconductor Materials.

David Albin (Inventor), Wyatt Metzger (Inventor), Eric Colegrove (Inventor), Joel Duenow (Inventor), James Burst (Inventor)

Research output: Patent

Abstract

Methods for growing and using large-grain templates are provided. According to an aspect of the invention, a method includes depositing a small-grain layer of a semiconductor material; treating the small-grain layer such that the small-grain layer becomes a large-grain layer; and growing an epitaxial layer of the semiconductor material on the large-grain layer. A ratio of an average grain size of the small-grain layer to a thickness of the small-grain layer is less than 1.0, and a ratio of an average grain size of the large-grain layer to a thickness of the large-grain layer is greater than 1.5.
Original languageAmerican English
Patent number10,304,989 B2
Filing date28/05/19
StatePublished - 2019

NREL Publication Number

  • NREL/PT-5K00-74073

Keywords

  • large grain layer
  • semiconductor
  • small grain layer

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