Abstract
Methods for growing and using large-grain templates are provided. According to an aspect of the invention, a method includes depositing a small-grain layer of a semiconductor material; treating the small-grain layer such that the small-grain layer becomes a large-grain layer; and growing an epitaxial layer of the semiconductor material on the large-grain layer. A ratio of an average grain size of the small-grain layer to a thickness of the small-grain layer is less than 1.0, and a ratio of an average grain size of the large-grain layer to a thickness of the large-grain layer is greater than 1.5.
Original language | American English |
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Patent number | 10,304,989 B2 |
Filing date | 28/05/19 |
State | Published - 2019 |
NREL Publication Number
- NREL/PT-5K00-74073
Keywords
- large grain layer
- semiconductor
- small grain layer