@misc{d1811e75a56a4dd0b35408f45aef1be7,
title = "Fabrication of Poly-Si on Locally Etched SiOx as Passivating Contacts for c-Si Solar Cells",
abstract = "Proof-of-concept for polysilicon on locally etched oxide (PLEO) contacts. Room temperature approach (via MACE) to engineer pinholes decouples charge-carrier transport across contact from passivation scheme of choice. 19 and 17% PLEO devices fabricated on double-side textured and saw-damage etched n Cz wafers, respectively. Preliminary work on polysilicon on locally etched nitride/oxide (PLENO) contacts. 0.2 fA/cm2 achieved with p PLENO; contact displays Ohmic behavior but still very resistive due to low pinhole density.",
keywords = "c-Si, metal-assisted chemical etch, passivating contact, photovoltaic, PLEO, poly-Si, PV",
author = "{Lima Salles}, Caroline and William Nemeth and Harvey Guthrey and Sumit Agarwal and Paul Stradins",
year = "2021",
language = "American English",
series = "Presented at the 48th IEEE Photovoltaic Specialists Conference (PVSC 48), 20-25 June 2021",
type = "Other",
}