Fabrication of Poly-Si on Locally Etched SiOx as Passivating Contacts for c-Si Solar Cells

Caroline Lima Salles; William Nemeth; Harvey Guthrey; Sumit Agarwal; Paul Stradins

doi:10.1109/PVSC43889.2021.9518647

Fabrication of Poly-Si on Locally Etched SiOx as Passivating Contacts for c-Si Solar Cells

Caroline Lima Salles, William Nemeth, Harvey Guthrey, Sumit Agarwal, Paul Stradins

Research output: Contribution to conference › Paper › peer-review

Abstract

Polysilicon on silicon oxide (poly-Si/SiOx) passivating contacts with predominant charge-carrier transport via pinholes were prepared with room temperature metal-assisted chemical etching. Pinhole areal densities in the range of 2.8×104 to 4.5×107 cm-2 were imaged by SEM. Contact resistivity of 32 m-ohm-cm2 and implied open circuit voltage of 729 mV were obtained for symmetric n+ poly-Si/SiOx grown onto randomly textured n-Cz. We also show preliminary data pertaining boron-doped polysilicon on nitride/oxide passivating contacts, with which we achieved implied open circuit voltage above 730 mV and recombination current of 0.2 fA/cm2.

Original language	American English
Pages	134-136
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC43889.2021.9518647 https://doi.org/10.1109/PVSC43889.2021.9518647
State	Published - 20 Jun 2021
Event	48th IEEE Photovoltaic Specialists Conference, PVSC 2021 - Fort Lauderdale, United States Duration: 20 Jun 2021 → 25 Jun 2021

Conference

Conference	48th IEEE Photovoltaic Specialists Conference, PVSC 2021
Country/Territory	United States
City	Fort Lauderdale
Period	20/06/21 → 25/06/21

Bibliographical note

Publisher Copyright:
© 2021 IEEE.

NREL Publication Number

NREL/CP-5900-81261

Keywords

amorphous Si
MACE
mesopore
passivating contact
polycrystalline Si contact

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Salles, C. L., Nemeth, W., Guthrey, H., Agarwal, S., & Stradins, P. (2021). Fabrication of Poly-Si on Locally Etched SiOx as Passivating Contacts for c-Si Solar Cells. 134-136. Paper presented at 48th IEEE Photovoltaic Specialists Conference, PVSC 2021, Fort Lauderdale, United States. https://doi.org/10.1109/PVSC43889.2021.9518647, https://doi.org/10.1109/PVSC43889.2021.9518647

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abstract = "Polysilicon on silicon oxide (poly-Si/SiOx) passivating contacts with predominant charge-carrier transport via pinholes were prepared with room temperature metal-assisted chemical etching. Pinhole areal densities in the range of 2.8×104 to 4.5×107 cm-2 were imaged by SEM. Contact resistivity of 32 m-ohm-cm2 and implied open circuit voltage of 729 mV were obtained for symmetric n+ poly-Si/SiOx grown onto randomly textured n-Cz. We also show preliminary data pertaining boron-doped polysilicon on nitride/oxide passivating contacts, with which we achieved implied open circuit voltage above 730 mV and recombination current of 0.2 fA/cm2.",

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author = "Salles, {Caroline Lima} and William Nemeth and Harvey Guthrey and Sumit Agarwal and Paul Stradins",

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Salles, CL, Nemeth, W , Guthrey, H, Agarwal, S & Stradins, P 2021, 'Fabrication of Poly-Si on Locally Etched SiOx as Passivating Contacts for c-Si Solar Cells', Paper presented at 48th IEEE Photovoltaic Specialists Conference, PVSC 2021, Fort Lauderdale, United States, 20/06/21 - 25/06/21 pp. 134-136. https://doi.org/10.1109/PVSC43889.2021.9518647, https://doi.org/10.1109/PVSC43889.2021.9518647

TY - CONF

T1 - Fabrication of Poly-Si on Locally Etched SiOx as Passivating Contacts for c-Si Solar Cells

AU - Salles, Caroline Lima

AU - Nemeth, William

AU - Guthrey, Harvey

AU - Agarwal, Sumit

AU - Stradins, Paul

PY - 2021/6/20

Y1 - 2021/6/20

N2 - Polysilicon on silicon oxide (poly-Si/SiOx) passivating contacts with predominant charge-carrier transport via pinholes were prepared with room temperature metal-assisted chemical etching. Pinhole areal densities in the range of 2.8×104 to 4.5×107 cm-2 were imaged by SEM. Contact resistivity of 32 m-ohm-cm2 and implied open circuit voltage of 729 mV were obtained for symmetric n+ poly-Si/SiOx grown onto randomly textured n-Cz. We also show preliminary data pertaining boron-doped polysilicon on nitride/oxide passivating contacts, with which we achieved implied open circuit voltage above 730 mV and recombination current of 0.2 fA/cm2.

AB - Polysilicon on silicon oxide (poly-Si/SiOx) passivating contacts with predominant charge-carrier transport via pinholes were prepared with room temperature metal-assisted chemical etching. Pinhole areal densities in the range of 2.8×104 to 4.5×107 cm-2 were imaged by SEM. Contact resistivity of 32 m-ohm-cm2 and implied open circuit voltage of 729 mV were obtained for symmetric n+ poly-Si/SiOx grown onto randomly textured n-Cz. We also show preliminary data pertaining boron-doped polysilicon on nitride/oxide passivating contacts, with which we achieved implied open circuit voltage above 730 mV and recombination current of 0.2 fA/cm2.

KW - amorphous Si

KW - MACE

KW - mesopore

KW - passivating contact

KW - polycrystalline Si contact

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U2 - 10.1109/PVSC43889.2021.9518647

DO - 10.1109/PVSC43889.2021.9518647

M3 - Paper

AN - SCOPUS:85115910310

SP - 134

EP - 136

T2 - 48th IEEE Photovoltaic Specialists Conference, PVSC 2021

Y2 - 20 June 2021 through 25 June 2021

ER -

Fabrication of Poly-Si on Locally Etched SiOx as Passivating Contacts for c-Si Solar Cells

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Conference

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Keywords

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