Fabrication of Poly-Si on Locally Etched SiOx as Passivating Contacts for c-Si Solar Cells

Caroline Lima Salles, William Nemeth, Harvey Guthrey, Sumit Agarwal, Paul Stradins

Research output: Contribution to conferencePaper

Abstract

Polysilicon on silicon oxide (poly-Si/SiO x ) passivating contacts with predominant charge-carrier transport via pinholes were prepared with room temperature metal-assisted chemical etching. Pinhole areal densities in the range of 2.8 x 10^4 to 4.5 x 10^7 cm^-2 were imaged by SEM. Contact resistivity of 32 m-ohm-cm^2 and implied open circuit voltage of 729 mV were obtained for symmetric n+ poly-Si/SiOx grown onto randomly textured n-Cz. We also show preliminary data pertaining boron-doped polysilicon on nitride/oxide passivating contacts, with which we achieved implied open circuit voltage above 730 mV and recombination current of 0.2 fA/cm^2.
Original languageAmerican English
Pages134-136
Number of pages3
DOIs
StatePublished - 2021
Event2021 IEEE 48th Photovoltaic Specialists Conference (PVSC) -
Duration: 20 Jun 202125 Jun 2021

Conference

Conference2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)
Period20/06/2125/06/21

NREL Publication Number

  • NREL/CP-5900-81261

Keywords

  • amorphous Si
  • MACE
  • mesopore
  • passivating contact
  • polycrystalline Si contact

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