Fabrication of Two-Terminal Metal-Interconnected Multijunction III-V Solar Cells

Chieh Ting Lin; W. E. McMahon; J. S. Ward; J. F. Geisz; M. W. Wanlass; J. J. Carapella; W. Olavarria; M. Young; M. A. Steiner; R. M. Frances; A. E. Kibbler; A. Duda; J. M. Olson; E. E. Perl; D. J. Friedman; J. E. Bowers

doi:10.1109/PVSC.2012.6317758

Fabrication of Two-Terminal Metal-Interconnected Multijunction III-V Solar Cells

Chieh Ting Lin, W. E. McMahon, J. S. Ward, J. F. Geisz, M. W. Wanlass, J. J. Carapella, W. Olavarria, M. Young, M. A. Steiner, R. M. Frances, A. E. Kibbler, A. Duda, J. M. Olson, E. E. Perl, D. J. Friedman, J. E. Bowers

Research output: Contribution to conference › Paper › peer-review

6 Scopus Citations

Abstract

A novel approach has been developed to enable the creation of a fully lattice-matched two-terminal four-junction III-V solar cell is which an upper 1.85 eV GaInP/ 1.42 eV GaAs two-junction (2J) tandem cell is bonded to a lower Eg3 eV GaInAsP/ 0.74 GaInAs eV 2J tandem cell. In this configuration, the upper tandem is grown inverted and lattice-matched to a GaAs substrate, and the lower tandem is grown upright and lattice-matched to an InP substrate. Prove of concept devices have been fabricated using Au-Au bonding with either SiO ₂ or GaInP₂ as a filler material. The bonding process is discussed in this paper as well as the result of an inverted GaAs cell bonded on a conducting GaAs wafer. The most complex device fabricated to date is a GaInP/GaAs 2J tandem cell bonded to a GaInAs cell using a GaInP₂ optical coupling layer, with a post-bonding V_oc of 2.7 eV.

Original language	American English
Pages	944-948
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC.2012.6317758 https://doi.org/10.1109/PVSC.2012.6317758
State	Published - 2012
Event	38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States Duration: 3 Jun 2012 → 8 Jun 2012

Conference

Conference	38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Country/Territory	United States
City	Austin, TX
Period	3/06/12 → 8/06/12

NREL Publication Number

NREL/CP-5200-57530

Keywords

device bonding
III-V multijunction solar cell

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Lin, C. T., McMahon, W. E., Ward, J. S., Geisz, J. F., Wanlass, M. W., Carapella, J. J., Olavarria, W., Young, M., Steiner, M. A., Frances, R. M., Kibbler, A. E., Duda, A., Olson, J. M., Perl, E. E., Friedman, D. J., & Bowers, J. E. (2012). Fabrication of Two-Terminal Metal-Interconnected Multijunction III-V Solar Cells. 944-948. Paper presented at 38th IEEE Photovoltaic Specialists Conference, PVSC 2012, Austin, TX, United States. https://doi.org/10.1109/PVSC.2012.6317758, https://doi.org/10.1109/PVSC.2012.6317758

@conference{8703c1a66942437888fe93efb61698c3,

title = "Fabrication of Two-Terminal Metal-Interconnected Multijunction III-V Solar Cells",

abstract = "A novel approach has been developed to enable the creation of a fully lattice-matched two-terminal four-junction III-V solar cell is which an upper 1.85 eV GaInP/ 1.42 eV GaAs two-junction (2J) tandem cell is bonded to a lower Eg3 eV GaInAsP/ 0.74 GaInAs eV 2J tandem cell. In this configuration, the upper tandem is grown inverted and lattice-matched to a GaAs substrate, and the lower tandem is grown upright and lattice-matched to an InP substrate. Prove of concept devices have been fabricated using Au-Au bonding with either SiO 2 or GaInP2 as a filler material. The bonding process is discussed in this paper as well as the result of an inverted GaAs cell bonded on a conducting GaAs wafer. The most complex device fabricated to date is a GaInP/GaAs 2J tandem cell bonded to a GaInAs cell using a GaInP2 optical coupling layer, with a post-bonding Voc of 2.7 eV.",

keywords = "device bonding, III-V multijunction solar cell",

author = "Lin, {Chieh Ting} and McMahon, {W. E.} and Ward, {J. S.} and Geisz, {J. F.} and Wanlass, {M. W.} and Carapella, {J. J.} and W. Olavarria and M. Young and Steiner, {M. A.} and Frances, {R. M.} and Kibbler, {A. E.} and A. Duda and Olson, {J. M.} and Perl, {E. E.} and Friedman, {D. J.} and Bowers, {J. E.}",

year = "2012",

doi = "10.1109/PVSC.2012.6317758",

language = "American English",

pages = "944--948",

note = "38th IEEE Photovoltaic Specialists Conference, PVSC 2012 ; Conference date: 03-06-2012 Through 08-06-2012",

}

Lin, CT, McMahon, WE, Ward, JS, Geisz, JF, Wanlass, MW, Carapella, JJ, Olavarria, W, Young, M , Steiner, MA, Frances, RM, Kibbler, AE, Duda, A, Olson, JM, Perl, EE, Friedman, DJ & Bowers, JE 2012, 'Fabrication of Two-Terminal Metal-Interconnected Multijunction III-V Solar Cells', Paper presented at 38th IEEE Photovoltaic Specialists Conference, PVSC 2012, Austin, TX, United States, 3/06/12 - 8/06/12 pp. 944-948. https://doi.org/10.1109/PVSC.2012.6317758, https://doi.org/10.1109/PVSC.2012.6317758

TY - CONF

T1 - Fabrication of Two-Terminal Metal-Interconnected Multijunction III-V Solar Cells

AU - Lin, Chieh Ting

AU - McMahon, W. E.

AU - Ward, J. S.

AU - Geisz, J. F.

AU - Wanlass, M. W.

AU - Carapella, J. J.

AU - Olavarria, W.

AU - Young, M.

AU - Steiner, M. A.

AU - Frances, R. M.

AU - Kibbler, A. E.

AU - Duda, A.

AU - Olson, J. M.

AU - Perl, E. E.

AU - Friedman, D. J.

AU - Bowers, J. E.

PY - 2012

Y1 - 2012

N2 - A novel approach has been developed to enable the creation of a fully lattice-matched two-terminal four-junction III-V solar cell is which an upper 1.85 eV GaInP/ 1.42 eV GaAs two-junction (2J) tandem cell is bonded to a lower Eg3 eV GaInAsP/ 0.74 GaInAs eV 2J tandem cell. In this configuration, the upper tandem is grown inverted and lattice-matched to a GaAs substrate, and the lower tandem is grown upright and lattice-matched to an InP substrate. Prove of concept devices have been fabricated using Au-Au bonding with either SiO 2 or GaInP2 as a filler material. The bonding process is discussed in this paper as well as the result of an inverted GaAs cell bonded on a conducting GaAs wafer. The most complex device fabricated to date is a GaInP/GaAs 2J tandem cell bonded to a GaInAs cell using a GaInP2 optical coupling layer, with a post-bonding Voc of 2.7 eV.

AB - A novel approach has been developed to enable the creation of a fully lattice-matched two-terminal four-junction III-V solar cell is which an upper 1.85 eV GaInP/ 1.42 eV GaAs two-junction (2J) tandem cell is bonded to a lower Eg3 eV GaInAsP/ 0.74 GaInAs eV 2J tandem cell. In this configuration, the upper tandem is grown inverted and lattice-matched to a GaAs substrate, and the lower tandem is grown upright and lattice-matched to an InP substrate. Prove of concept devices have been fabricated using Au-Au bonding with either SiO 2 or GaInP2 as a filler material. The bonding process is discussed in this paper as well as the result of an inverted GaAs cell bonded on a conducting GaAs wafer. The most complex device fabricated to date is a GaInP/GaAs 2J tandem cell bonded to a GaInAs cell using a GaInP2 optical coupling layer, with a post-bonding Voc of 2.7 eV.

KW - device bonding

KW - III-V multijunction solar cell

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U2 - 10.1109/PVSC.2012.6317758

DO - 10.1109/PVSC.2012.6317758

M3 - Paper

AN - SCOPUS:84869432208

SP - 944

EP - 948

T2 - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012

Y2 - 3 June 2012 through 8 June 2012

ER -

Fabrication of Two-Terminal Metal-Interconnected Multijunction III-V Solar Cells

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Keywords

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