Fabrication of Two-Terminal Metal-Interconnected Multijunction III-V Solar Cells

Chieh Ting Lin, W. E. McMahon, J. S. Ward, J. F. Geisz, M. W. Wanlass, J. J. Carapella, W. Olavarria, M. Young, M. A. Steiner, R. M. Frances, A. E. Kibbler, A. Duda, J. M. Olson, E. E. Perl, D. J. Friedman, J. E. Bowers

Research output: Contribution to conferencePaperpeer-review

6 Scopus Citations


A novel approach has been developed to enable the creation of a fully lattice-matched two-terminal four-junction III-V solar cell is which an upper 1.85 eV GaInP/ 1.42 eV GaAs two-junction (2J) tandem cell is bonded to a lower Eg3 eV GaInAsP/ 0.74 GaInAs eV 2J tandem cell. In this configuration, the upper tandem is grown inverted and lattice-matched to a GaAs substrate, and the lower tandem is grown upright and lattice-matched to an InP substrate. Prove of concept devices have been fabricated using Au-Au bonding with either SiO 2 or GaInP2 as a filler material. The bonding process is discussed in this paper as well as the result of an inverted GaAs cell bonded on a conducting GaAs wafer. The most complex device fabricated to date is a GaInP/GaAs 2J tandem cell bonded to a GaInAs cell using a GaInP2 optical coupling layer, with a post-bonding Voc of 2.7 eV.

Original languageAmerican English
Number of pages5
StatePublished - 2012
Event38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States
Duration: 3 Jun 20128 Jun 2012


Conference38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Country/TerritoryUnited States
CityAustin, TX

NREL Publication Number

  • NREL/CP-5200-57530


  • device bonding
  • III-V multijunction solar cell


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