Abstract
Controlled spalling is an emerging technique developed for fast, scalable wafer reuse, but for the commonly used (100) GaAs substrate system, the process leaves large facets ranging from 5-10 μm on the wafer surface. Removing them for wafer reuse requires a costly re-polishing step that limits the cost savings that can be achieved with spalling as a wafer reuse technique. In this study, we investigate facet suppression in spalling of (100) GaAs by redirecting the fracture front along features created by buried nanoimprint lithography (NIL)-patterned SiO2. We show successful facet suppression using patterns that result in favorable fracture along the SiO2/GaAs interface. The results from this work show NIL patterned interlayers are a promising method for faceting suppression in (100) GaAs spalling.
Original language | American English |
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Pages | 1507-1509 |
Number of pages | 3 |
DOIs | |
State | Published - 20 Jun 2021 |
Event | 48th IEEE Photovoltaic Specialists Conference, PVSC 2021 - Fort Lauderdale, United States Duration: 20 Jun 2021 → 25 Jun 2021 |
Conference
Conference | 48th IEEE Photovoltaic Specialists Conference, PVSC 2021 |
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Country/Territory | United States |
City | Fort Lauderdale |
Period | 20/06/21 → 25/06/21 |
Bibliographical note
Publisher Copyright:© 2021 IEEE.
NREL Publication Number
- NREL/CP-5900-78993
Keywords
- controlled spalling
- nanoimprint lithography