Facet Suppression in (100) GaAs Spalling via Use of a Nanoimprint Lithography Release Layer

Anna Braun, San Theingi, Aaron Ptak, Corinne Packard

Research output: Contribution to conferencePaperpeer-review

2 Scopus Citations

Abstract

Controlled spalling is an emerging technique developed for fast, scalable wafer reuse, but for the commonly used (100) GaAs substrate system, the process leaves large facets ranging from 5-10 μm on the wafer surface. Removing them for wafer reuse requires a costly re-polishing step that limits the cost savings that can be achieved with spalling as a wafer reuse technique. In this study, we investigate facet suppression in spalling of (100) GaAs by redirecting the fracture front along features created by buried nanoimprint lithography (NIL)-patterned SiO2. We show successful facet suppression using patterns that result in favorable fracture along the SiO2/GaAs interface. The results from this work show NIL patterned interlayers are a promising method for faceting suppression in (100) GaAs spalling.

Original languageAmerican English
Pages1507-1509
Number of pages3
DOIs
StatePublished - 20 Jun 2021
Event48th IEEE Photovoltaic Specialists Conference, PVSC 2021 - Fort Lauderdale, United States
Duration: 20 Jun 202125 Jun 2021

Conference

Conference48th IEEE Photovoltaic Specialists Conference, PVSC 2021
Country/TerritoryUnited States
CityFort Lauderdale
Period20/06/2125/06/21

Bibliographical note

Publisher Copyright:
© 2021 IEEE.

NREL Publication Number

  • NREL/CP-5900-78993

Keywords

  • controlled spalling
  • nanoimprint lithography

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