Factors Influencing Photoluminescence and Photocarrier Lifetime in CdSeTe/CdMgTe Double Heterostructures

Katherine Zaunbrecher, Teresa Barnes, C. Swartz, S. Sohal, E. LeBlanc, M. Edirisooriya, O. Ogedengbe, J. Petersen, P.A.R.D. Jayathilaka, T. Myers, M. Holtz

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9 Scopus Citations


CdSeTe/CdMgTe double heterostructures were produced with both n-type and unintentionally doped absorber layers. Measurements of the dependence of photoluminescence intensity on excitation intensity were carried out, as well as measurements of time-resolved photoluminescence decay after an excitation pulse. It was found that decay times under very low photon injection conditions are dominated by a non-radiative Shockley-Read-Hall process described using a recombination center with an asymmetric capture cross section, where the cross section for holes is larger than that for electrons. As a result of the asymmetry, the center effectively extends photoluminescence decay by a hole trapping phenomenon. A reduction in electron capture cross section appeared at doping densities over 1016cm-3. An analysis of the excitation intensity dependence of room temperature photoluminescence revealed a strong relationship with doping concentration. This allows estimates of the carrier concentration to be made through a non-destructive optical method. Iodine was found to be an effective n-type dopant for CdTe, allowing controllable carrier concentrations without an increased rate of non-radiative recombination.

Original languageAmerican English
Article numberArticle No. 165305
Number of pages7
JournalJournal of Applied Physics
Issue number16
StatePublished - 28 Oct 2016

Bibliographical note

Publisher Copyright:
© 2016 Author(s).

NREL Publication Number

  • NREL/JA-5K00-67465


  • doping
  • electron capture
  • heterojunctions
  • II-VI semiconductors
  • photoluminescence


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