Factors Influencing Photoluminescence and Photocarrier Lifetime in CdSeTe/CdMgTe Double Heterostructures

Engineering

• Capture Cross Section 100%
• Heterostructures 100%
• Influencing Factor 100%
• Carrier Concentration 100%
• Dopants 50%
• Absorber Layer 50%
• Recombination Centre 50%
• Shockley 50%
• Doping Density 50%
• Decay Time 50%
• Cross Section 50%
• Room Temperature 50%
• Radiative Recombination 50%
• Electron Capture 50%

Material Science

• Heterojunction 100%
• Photoluminescence 100%
• Carrier Concentration 40%
• Density 20%
• Doping (Additives) 20%

Physics

• Photoluminescence 100%
• Absorption Cross Sections 40%
• Room Temperature 20%
• Optical Method 20%