Failure Analysis to Identify Thermal Runaway of Bypass Diodes in Fielded Modules

Chuanxiao Xiao, Steven Johnston, Peter Hacke, Mowafak Al-Jassim, Yasunori Uchida

Research output: NRELPoster

Abstract

We studied a bypass diode recuperated from fielded modules in a rooftop installation to determine the failure mechanism. The field-failed diode showed similar characteristics to thermal runaway, specifically X-ray tomography evidence of migrated metal. We also observed burn marks on the silicon surface like those lab-stressed for thermal runaway. Reaction products are more soluble than silicon and the surface is oxygen rich.
Original languageAmerican English
StatePublished - 2017

Publication series

NamePresented at the 2017 Photovoltaic Module Reliability Workshop, 28 February - 2 March 2017, Lakewood, Colorado

NREL Publication Number

  • NREL/PO-5K00-68083

Keywords

  • bypass diode
  • failure analysis
  • fielded module
  • thermal imaging
  • X-ray tomography

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