Fermi Energy Tuning with Light to Control Doping Profiles During Epitaxy

Kirstin Alberi, Robert Reedy Jr., Charlotte Sanders, Daniel Beaton

Research output: Contribution to journalArticlepeer-review

14 Scopus Citations


The influence of light stimulation and photogenerated carriers on the process of dopant surface segregation during growth is studied in molecular beam epitaxially grown Si-doped GaAs structures. The magnitude of surface segregation decreases under illumination by above-bandgap photons, wherein splitting of the quasi Fermi levels reduces the band bending at the growth surface and raises the formation energy of compensating defects that can enhance atomic diffusion. We further show that light-stimulated epitaxy can be used as a practical approach to diminish dopant carry-forward in device structures and improve the performance of inverted modulation-doped quantum wells.

Original languageAmerican English
Article number182105
Number of pages4
JournalApplied Physics Letters
Issue number18
StatePublished - 4 May 2015

Bibliographical note

Publisher Copyright:
© 2015 AIP Publishing LLC.

NREL Publication Number

  • NREL/JA-5K00-64047


  • epitaxy
  • Fermi energy
  • semiconductor


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