Ferroelectric Film Phase Shifter Under Elevated Microwave Power

A. Kozyrev, T. Samoilova, O. Soldatenkov, O. Buslov, A. Ivanov, Ning Xin Zhang, Tian Ling Ren, D. Ginley, T. Kaydanova

Research output: Contribution to journalArticlepeer-review

2 Scopus Citations


Voltage-controlled phase shifters based on fin-lines incorporating barium-strontium titanate (BSTO) films were studied at high microwave power levels (∼37 GHz). The two primary mechanisms responsible for phase variation in the ferroelectric phase shifters under microwave power were experimentally identified and theoretically described: (i) microwave-electric-field induced instantaneous variation of the BSTO film dielectric constant; (ii) a comparatively slow thermal drift of dielectric constant due to microwave power dissipation in the ferroelectric films. It is shown that the power handling capability of these tunable microwave devices is defined by the thermal effects.

Original languageAmerican English
Pages (from-to)139-149
Number of pages11
JournalIntegrated Ferroelectrics
StatePublished - 2005
EventSeventeenth International Symposium on Integrated Ferroelectrics, ISIF-17 - Shanghai, China
Duration: 17 Apr 200520 Apr 2005

NREL Publication Number

  • NREL/JA-520-39687


  • Ferroelectric phase shifter
  • Power handling capability


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