Ferroelectric Film Phase Shifter Under Elevated Microwave Power

A. Kozyrev; T. Samoilova; O. Soldatenkov; O. Buslov; A. Ivanov; Ning Xin Zhang; Tian Ling Ren; D. Ginley; T. Kaydanova

doi:10.1080/10584580500414341

Ferroelectric Film Phase Shifter Under Elevated Microwave Power

A. Kozyrev, T. Samoilova, O. Soldatenkov, O. Buslov, A. Ivanov, Ning Xin Zhang, Tian Ling Ren, D. Ginley, T. Kaydanova

Materials, Chemical, and Computational Science

Research output: Contribution to journal › Article › peer-review

2 Scopus Citations

Abstract

Voltage-controlled phase shifters based on fin-lines incorporating barium-strontium titanate (BSTO) films were studied at high microwave power levels (∼37 GHz). The two primary mechanisms responsible for phase variation in the ferroelectric phase shifters under microwave power were experimentally identified and theoretically described: (i) microwave-electric-field induced instantaneous variation of the BSTO film dielectric constant; (ii) a comparatively slow thermal drift of dielectric constant due to microwave power dissipation in the ferroelectric films. It is shown that the power handling capability of these tunable microwave devices is defined by the thermal effects.

Original language	American English
Pages (from-to)	139-149
Number of pages	11
Journal	Integrated Ferroelectrics
Volume	77
DOIs	https://doi.org/10.1080/10584580500414341 https://doi.org/10.1080/10584580500414341
State	Published - 2005
Event	Seventeenth International Symposium on Integrated Ferroelectrics, ISIF-17 - Shanghai, China Duration: 17 Apr 2005 → 20 Apr 2005

NREL Publication Number

NREL/JA-520-39687

Keywords

Ferroelectric phase shifter
Power handling capability

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title = "Ferroelectric Film Phase Shifter Under Elevated Microwave Power",

abstract = "Voltage-controlled phase shifters based on fin-lines incorporating barium-strontium titanate (BSTO) films were studied at high microwave power levels (∼37 GHz). The two primary mechanisms responsible for phase variation in the ferroelectric phase shifters under microwave power were experimentally identified and theoretically described: (i) microwave-electric-field induced instantaneous variation of the BSTO film dielectric constant; (ii) a comparatively slow thermal drift of dielectric constant due to microwave power dissipation in the ferroelectric films. It is shown that the power handling capability of these tunable microwave devices is defined by the thermal effects.",

keywords = "Ferroelectric phase shifter, Power handling capability",

author = "A. Kozyrev and T. Samoilova and O. Soldatenkov and O. Buslov and A. Ivanov and Zhang, {Ning Xin} and Ren, {Tian Ling} and D. Ginley and T. Kaydanova",

year = "2005",

doi = "10.1080/10584580500414341",

language = "American English",

volume = "77",

pages = "139--149",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

note = "Seventeenth International Symposium on Integrated Ferroelectrics, ISIF-17 ; Conference date: 17-04-2005 Through 20-04-2005",

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TY - JOUR

T1 - Ferroelectric Film Phase Shifter Under Elevated Microwave Power

AU - Kozyrev, A.

AU - Samoilova, T.

AU - Soldatenkov, O.

AU - Buslov, O.

AU - Ivanov, A.

AU - Zhang, Ning Xin

AU - Ren, Tian Ling

AU - Ginley, D.

AU - Kaydanova, T.

PY - 2005

Y1 - 2005

N2 - Voltage-controlled phase shifters based on fin-lines incorporating barium-strontium titanate (BSTO) films were studied at high microwave power levels (∼37 GHz). The two primary mechanisms responsible for phase variation in the ferroelectric phase shifters under microwave power were experimentally identified and theoretically described: (i) microwave-electric-field induced instantaneous variation of the BSTO film dielectric constant; (ii) a comparatively slow thermal drift of dielectric constant due to microwave power dissipation in the ferroelectric films. It is shown that the power handling capability of these tunable microwave devices is defined by the thermal effects.

AB - Voltage-controlled phase shifters based on fin-lines incorporating barium-strontium titanate (BSTO) films were studied at high microwave power levels (∼37 GHz). The two primary mechanisms responsible for phase variation in the ferroelectric phase shifters under microwave power were experimentally identified and theoretically described: (i) microwave-electric-field induced instantaneous variation of the BSTO film dielectric constant; (ii) a comparatively slow thermal drift of dielectric constant due to microwave power dissipation in the ferroelectric films. It is shown that the power handling capability of these tunable microwave devices is defined by the thermal effects.

KW - Ferroelectric phase shifter

KW - Power handling capability

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U2 - 10.1080/10584580500414341

DO - 10.1080/10584580500414341

M3 - Article

AN - SCOPUS:33645498784

SN - 1058-4587

VL - 77

SP - 139

EP - 149

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

T2 - Seventeenth International Symposium on Integrated Ferroelectrics, ISIF-17

Y2 - 17 April 2005 through 20 April 2005

ER -

Ferroelectric Film Phase Shifter Under Elevated Microwave Power

Abstract

NREL Publication Number

Keywords

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