Field Dependent Electrical Conduction in HfO2/SiO2 Gate Stack for Before and After Constant Voltage Stressing: Article No. 084104

Santosh Sahoo

Research output: Contribution to journal › Article › peer-review

NREL Publication Number

@article{8f0d1e2c93e445febccb498c0f46e6e0,

title = "Field Dependent Electrical Conduction in HfO2/SiO2 Gate Stack for Before and After Constant Voltage Stressing: Article No. 084104",

keywords = "electrical conduction, semiconductor, SiO2, solar",

author = "Santosh Sahoo",

year = "2011",

doi = "10.1063/1.3651087",

language = "American English",

volume = "110",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Field Dependent Electrical Conduction in HfO2/SiO2 Gate Stack for Before and After Constant Voltage Stressing

T2 - Article No. 084104

AU - Sahoo, Santosh

PY - 2011

Y1 - 2011

KW - electrical conduction

KW - semiconductor

KW - SiO2

KW - solar

U2 - 10.1063/1.3651087

DO - 10.1063/1.3651087

M3 - Article

SN - 0021-8979

VL - 110

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -