Film Formation Mechanisms in the Plasma Deposition of Hydrogenated Amorphous Silicon

Research output: Contribution to journal › Article

Work performed by Xerox Palo Alto Research Center, Palo Alto, California

NLR Publication Number

@article{007f2046011b435ba334350e80de30bf,

title = "Film Formation Mechanisms in the Plasma Deposition of Hydrogenated Amorphous Silicon",

author = "NREL",

note = "Work performed by Xerox Palo Alto Research Center, Palo Alto, California",

year = "1986",

doi = "10.1063/1.336920",

language = "American English",

volume = "58",

pages = "2998--3001",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Film Formation Mechanisms in the Plasma Deposition of Hydrogenated Amorphous Silicon

AU - NREL, null

N1 - Work performed by Xerox Palo Alto Research Center, Palo Alto, California

PY - 1986

Y1 - 1986

U2 - 10.1063/1.336920

DO - 10.1063/1.336920

M3 - Article

SN - 0021-8979

VL - 58

SP - 2998

EP - 3001

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -