Film Growth Mechanisms of Plasma-Deposited Amorphous Silicon Studied by Step Coverage

Film Growth Mechanisms of Plasma-Deposited Amorphous Silicon Studied by Step Coverage

Research output: Contribution to conference › Paper

Original language	American English
Pages	43-52
Number of pages	10
State	Published - 1987
Event	International Workshop on Amorphous Semiconductors - Beijing, China Duration: 13 Oct 1986 → 18 Oct 1986

Conference

Conference	International Workshop on Amorphous Semiconductors
City	Beijing, China
Period	13/10/86 → 18/10/86

Bibliographical note

Work performed by Xerox Palo Alto Research Center, Palo Alto, California

NREL Publication Number

ACNR/CP-9457

Cite this

@conference{68a7a0176f4b4eb1ac27256666325e44,

title = "Film Growth Mechanisms of Plasma-Deposited Amorphous Silicon Studied by Step Coverage",

author = "NREL",

note = "Work performed by Xerox Palo Alto Research Center, Palo Alto, California; International Workshop on Amorphous Semiconductors ; Conference date: 13-10-1986 Through 18-10-1986",

year = "1987",

language = "American English",

pages = "43--52",

}