Final Report for PV Incubator Subcontract No. NEU-0-99010-09: March 29, 2010 - March 28, 2011

Kaitlyn VanSant; Kaitlyn VanSant

Final Report for PV Incubator Subcontract No. NEU-0-99010-09: March 29, 2010 - March 28, 2011

Kaitlyn VanSant, Kaitlyn VanSant (NREL Technical Monitor)

Research output: NREL › Subcontract Report

Abstract

MicroLink has developed a process technology that will enable the manufacture of high-efficiency, low-cost, multijunction solar cells for use in concentrating photovoltaic (CPV) applications. The multijunction cells were fabricated using a novel low-temperature wafer bonding process. A triple-junction InGaP/GaAs/Ge tandem solar cell with efficiency of 30% at 1 sun AM1.5 illumination wasfabricated by wafer bonding a dual-junction InGaP/GaAs cell to a single-junction Ge cell. Temperature cycling over the range -25 degrees C to +40 degrees C resulted in no degradation of cell performance. Triple junction InGaP/GaAs/Ge cells were mounted onto ceramic carriers and tested at concentrations up to 300 suns.

Original language	American English
Number of pages	31
State	Published - 2012

Bibliographical note

Work performed by MicroLink Devices, Niles, Illinois

NREL Publication Number

NREL/SR-5200-54692

Keywords

concentrator
CPV
ELO
epitaxial liftoff
GaAs
gallium arsenide
mulitjunction solar cells
photovoltaics
pre-incubator
PV
solar cells
wafer bonding

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

https://www.nrel.gov/docs/fy12osti/54692.pdf

Cite this

@misc{cfc70a88658d464cb71745a1e97be518,

title = "Final Report for PV Incubator Subcontract No. NEU-0-99010-09: March 29, 2010 - March 28, 2011",

abstract = "MicroLink has developed a process technology that will enable the manufacture of high-efficiency, low-cost, multijunction solar cells for use in concentrating photovoltaic (CPV) applications. The multijunction cells were fabricated using a novel low-temperature wafer bonding process. A triple-junction InGaP/GaAs/Ge tandem solar cell with efficiency of 30% at 1 sun AM1.5 illumination wasfabricated by wafer bonding a dual-junction InGaP/GaAs cell to a single-junction Ge cell. Temperature cycling over the range -25 degrees C to +40 degrees C resulted in no degradation of cell performance. Triple junction InGaP/GaAs/Ge cells were mounted onto ceramic carriers and tested at concentrations up to 300 suns.",

keywords = "concentrator, CPV, ELO, epitaxial liftoff, GaAs, gallium arsenide, mulitjunction solar cells, photovoltaics, pre-incubator, PV, solar cells, wafer bonding",

author = "Kaitlyn VanSant and Kaitlyn VanSant",

note = "Work performed by MicroLink Devices, Niles, Illinois",

year = "2012",

language = "American English",

type = "Other",

}

TY - GEN

T1 - Final Report for PV Incubator Subcontract No. NEU-0-99010-09: March 29, 2010 - March 28, 2011

AU - VanSant, Kaitlyn

A2 - VanSant, Kaitlyn

N1 - Work performed by MicroLink Devices, Niles, Illinois

PY - 2012

Y1 - 2012

N2 - MicroLink has developed a process technology that will enable the manufacture of high-efficiency, low-cost, multijunction solar cells for use in concentrating photovoltaic (CPV) applications. The multijunction cells were fabricated using a novel low-temperature wafer bonding process. A triple-junction InGaP/GaAs/Ge tandem solar cell with efficiency of 30% at 1 sun AM1.5 illumination wasfabricated by wafer bonding a dual-junction InGaP/GaAs cell to a single-junction Ge cell. Temperature cycling over the range -25 degrees C to +40 degrees C resulted in no degradation of cell performance. Triple junction InGaP/GaAs/Ge cells were mounted onto ceramic carriers and tested at concentrations up to 300 suns.

AB - MicroLink has developed a process technology that will enable the manufacture of high-efficiency, low-cost, multijunction solar cells for use in concentrating photovoltaic (CPV) applications. The multijunction cells were fabricated using a novel low-temperature wafer bonding process. A triple-junction InGaP/GaAs/Ge tandem solar cell with efficiency of 30% at 1 sun AM1.5 illumination wasfabricated by wafer bonding a dual-junction InGaP/GaAs cell to a single-junction Ge cell. Temperature cycling over the range -25 degrees C to +40 degrees C resulted in no degradation of cell performance. Triple junction InGaP/GaAs/Ge cells were mounted onto ceramic carriers and tested at concentrations up to 300 suns.

KW - concentrator

KW - CPV

KW - ELO

KW - epitaxial liftoff

KW - GaAs

KW - gallium arsenide

KW - mulitjunction solar cells

KW - photovoltaics

KW - pre-incubator

KW - PV

KW - solar cells

KW - wafer bonding

M3 - Subcontract Report

ER -

Final Report for PV Incubator Subcontract No. NEU-0-99010-09: March 29, 2010 - March 28, 2011

Abstract

Bibliographical note

NREL Publication Number

Keywords

UN SDGs

Access to Document

Fingerprint

Cite this