First Principles Calculation of Semiconductor Heterojunction Valence Band Offsets for the Common-Anion Pairs HgTe-CdTe, HgTe-ZnTe, and GaAs-AlAs: (Abstract No. JH6)

First Principles Calculation of Semiconductor Heterojunction Valence Band Offsets for the Common-Anion Pairs HgTe-CdTe, HgTe-ZnTe, and GaAs-AlAs: (Abstract No. JH6)

Research output: Contribution to journal › Article

Original language	American English
Number of pages	680
Journal	Bulletin of the American Physical Society
Volume	32
Issue number	3
State	Published - 1987

NREL Publication Number

ACNR/JA-212-9020

Cite this

@article{1ed778aa3ea342f89b0a5010654feaa0,

title = "First Principles Calculation of Semiconductor Heterojunction Valence Band Offsets for the Common-Anion Pairs HgTe-CdTe, HgTe-ZnTe, and GaAs-AlAs: (Abstract No. JH6)",

author = "NREL",

year = "1987",

language = "American English",

volume = "32",

journal = "Bulletin of the American Physical Society",

issn = "0003-0503",

publisher = "American Physical Society",

number = "3",

}